Vishay N-Channel MOSFET, 4.3 A, 100 V Enhancement Mode, 3-Pin IPAK (TO-251) Surface Mount IRFU110PBF

Vishay IRFU110PBF is a high-performance N-Channel Enhancement Mode MOSFET designed for applications requiring efficient switching and power handling capabilities. Rated for a maximum continuous drain current of 4.3 A and a drain-source voltage of 100 V, it operates reliably within a wide ambient temperature range from -55°C to 150°C. The device comes in a compact 3-pin IPAK (TO-251) surface mount package suitable for space-constrained electronic circuits.

This MOSFET features a low on-resistance of 0.54 Ω, helping to reduce conduction losses and improve overall efficiency in power management, motor control, and switching regulator applications. The typical gate charge is 8.3 nC at rated gate-source voltage, offering swift switching transitions while minimizing drive power requirements. The gate-source voltage tolerance of ±20 V protects the gate against voltage spikes during operation.

Its physical dimensions (6.73 mm length, 2.38 mm width, and 6.22 mm height) allow easy integration into standard footprint designs on printed circuit boards. Compliant with RoHS 2002/95/EC directives, the IRFU110PBF supports eco-friendly electronics manufacturing practices.

This discrete semiconductor MOSFET is ideal for industrial, electronic manufacturing, power management, and laboratory circuitry due to its robustness, power capability, and compact package.

Supports a continuous drain current of 4.3 amperes for reliable power handling. Maximum drain-source voltage rated at 100 volts for robust electrical performance. Low on-resistance of 0.54 ohms minimizing power losses. Compact 3-pin IPAK (TO-251) surface mount package for efficient PCB space utilization.

Capable of dissipating a maximum power of 25 watts under normal operation. Operating temperature range extends from -55°C to 150°C for versatile application environments. Typical gate charge of 8.3 nC at gate-source voltage enhances switching efficiency.

Maximum gate-source voltage ranges between -20 and +20 volts ensuring gate reliability. Dimensions: Length 6.73 mm, Width 2.38 mm, Height 6.22 mm fitting standard footprint designs. Complies with RoHS 2002/95/EC standards ensuring environmental safety.

Explore more MOSFETs and discrete semiconductor components on EnvMart for your electronic design and manufacturing needs.