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Vishay N-Channel MOSFET 3.6 A, 600 V Enhancement Mode, 3-Pin TO-220 Package IRFBC30APBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBC30APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBC30A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-4768Brand: VishayManufacturers Part No.: IRFBC30APBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Supports continuous drain current of 3.6 amperes.
- High voltage rating of 600 volts suitable for power switching applications.
- Enhancement mode channel type for reliable switching.
- Compact TO-220 package with 3 pins designed for through-hole mounting.
- Maximum power dissipation of 74 watts for efficient heat handling.
- Operating temperature range from -55°C to 150°C to suit industrial environments.
- Low maximum drain-source resistance of 2.2 ohms improves efficiency.
- Typical gate charge of 23 nC at Vgs supporting fast switching.
Product Description
Vishay IRFBC30APBF is a high-performance N-Channel MOSFET designed for power management and switching applications. Rated for a maximum continuous drain current of 3.6 A and a maximum drain-source voltage of 600 V, it operates in enhancement mode ensuring robust switching capabilities. Packaged in a 3-pin TO-220 form factor, it supports easy through-hole mounting and effective heat dissipation with a maximum power dissipation of 74 W.
This MOSFET is engineered to perform reliably in demanding industrial environments with an operating temperature range from -55°C to 150°C. Its low maximum drain-source resistance of 2.2 Ω enhances overall efficiency and reduces power loss during operation. The device's typical gate charge of 23 nC at Vgs enables rapid switching performance, critical for high-frequency power electronics.
The maximum gate-source voltage rating of ±30 V safeguards the gate terminal against voltage spikes. Physical dimensions measuring 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width provide a compact but robust footprint suitable for a variety of electronic power circuits.
Commonly used in power converters, motor control circuits, lighting control, and other electronic systems requiring efficient power switching, the IRFBC30APBF delivers reliable and cost-effective performance.
Supports continuous drain current of 3.6 amperes. High voltage rating of 600 volts suitable for power switching applications. Enhancement mode channel type for reliable switching. Compact TO-220 package with 3 pins designed for through-hole mounting.
Maximum power dissipation of 74 watts for efficient heat handling. Operating temperature range from -55°C to 150°C to suit industrial environments. Low maximum drain-source resistance of 2.2 ohms improves efficiency. Typical gate charge of 23 nC at Vgs supporting fast switching.
Maximum gate-source voltage rating of ±30 V for gate protection. Dimensions approximately 10.41 mm length, 9.01 mm height, and 4.7 mm width.
This product is ideal for use in industrial, laboratory, manufacturing, and power electronics applications. Explore more Vishay MOSFETs and related discrete semiconductors in the EnvMart catalog for comprehensive power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 amperes.
This MOSFET has a maximum drain-source voltage rating of 600 volts.
It is packaged in a compact TO-220 form factor with 3 pins designed for through-hole mounting.
The operating temperature range for this model is from -55°C to 150°C.
The maximum power dissipation for this MOSFET is 74 watts.
The maximum gate-source voltage rating is ±30 volts, which protects the gate terminal against voltage spikes.
The typical gate charge at Vgs is 23 nC, supporting fast switching performance.
The maximum drain-source resistance is 2.2 ohms, which improves efficiency during operation.
The physical dimensions are approximately 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
This model uses an N-channel type, which is suitable for enhancement mode switching.
It is commonly used in power converters, motor control circuits, and lighting control applications.
The country of origin for this MOSFET is China.
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