Toshiba 4-Element ESD Protection Diode 200 mW 5-Pin USV DF5A5.6CFU(TE85L,F

Toshiba DF5A5.6CFU(TE85L,F is a 4-Element ESD Protection Diode designed for safeguarding delicate electronic circuits against electrostatic discharge damage. This diode assembly features a common anode configuration housed in a compact 5-pin USV surface mount package, offering a peak pulse power dissipation of 200 mW.

With dimensions of 2 mm in width, 1.25 mm in length, and 0.9 mm in height, it fits efficiently in space-constrained PCB layouts. The device operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronic applications.

The 4 elements per chip configuration enhances multi-line ESD protection, improving overall circuit robustness. The maximum reverse leakage current is 1 µA, minimizing unwanted current flow under normal operating conditions.

This diode features a common anode configuration suitable for ESD protection applications. It supports surface mount technology with a compact 2 mm width and 1.25 mm length. Designed for a wide operating temperature range from -55°C up to 150°C.

Maximum reverse leakage current is rated at 1 µA, assuring low leakage performance. The diode contains 4 elements per chip enhancing multi-line protection capabilities. Test current is specified at 5 mA for reliable performance verification.

The package type is USV with a height of 0.9 mm suitable for compact PCB designs. Manufactured in Japan to meet stringent quality standards. Ideal for protecting sensitive electronic components from electrostatic discharge in industrial, consumer electronics, and automotive environments.

This Toshiba ESD Protection Diode is widely used in electronic components, power connectors, semiconductor modules, and discrete semiconductor applications. The device contributes to safeguarding circuits in electronics manufacturing, automotive industry, telecommunications equipment, and industrial electronics.

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