Toshiba P-Channel MOSFET 2 A 20 V Surface Mount 3-Pin UFM Package SSM3J120TU(TE85L)

Toshiba SSM3J120TU(TE85L) is a P-Channel MOSFET transistor designed for efficient power switching in electronic and electrical semiconductor applications. It features a maximum continuous drain current of 2 amperes and can sustain drain-source voltages up to 20 volts. The device employs an enhancement mode channel and comes in a compact 3-pin UFM surface mount package suitable for high-density PCB layouts.

With a maximum drain-source resistance of 140 milliohms, this MOSFET offers low conduction losses, enhancing energy efficiency in circuits. It supports a power dissipation capability of up to 800 milliwatts, catering to moderate power applications reliably. The transistor operates reliably across a temperature range from -55°C to 150°C, making it suitable for industrial and environmentally demanding conditions.

The device's typical gate charge of 22.3 nanocoulombs at gate-source voltage provides fast switching characteristics essential for power conversion and motor control applications. It tolerates gate-source voltages in the range of -8 to +8 volts, enhancing robustness against voltage spikes. The low forward voltage drop of approximately 800 millivolts aids in reducing power losses during conduction phases.

Physically, the MOSFET measures 2.1 mm in length, 1.7 mm in width, and 700 microns in height, facilitating compact assembly designs. Manufactured in Japan, Toshiba ensures this semiconductor's high quality and reliability for industrial, commercial, and consumer electronics uses.

This P-Channel MOSFET is widely used in power management units, DC-DC converters, load switching, and general amplification circuits. It is ideal for engineers and technicians requiring reliable and compact transistor solutions for switching and amplification roles.

Designed with enhancement mode channel operation for efficient switching performance. Maximum drain-source resistance of 140 milliohms ensuring low conduction losses. Handles a maximum power dissipation of 800 milliwatts for thermal reliability.

Operating temperature range from -55°C to 150°C supports wide environmental conditions. Compact package dimensions with 2.1 mm length, 1.7 mm width, and 700 microns height. Typical gate charge of 22.3 nanocoulombs facilitates fast switching in power circuits.

Gate-source voltage tolerance of -8 to +8 volts enhances device robustness. Forward voltage drop of approximately 800 millivolts suitable for power applications. Manufactured in Japan assuring high quality and reliability.

Ideal for power management, switching, and amplification applications in industrial and consumer electronics. Discover more MOSFETs and semiconductor products to support your electronic design on EnvMart.