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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.66mm |
| Model | IRL1404ZPBF |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-7178Brand: InfineonManufacturers Part No.: IRL1404ZPBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 200A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 75nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Infineon IRL1404ZPBF HEXFET N-Channel MOSFET is a semiconductor device engineered for high current and power dissipation applications. Designed with an enhancement mode channel and N-type conduction, it provides dependable operation in various industrial contexts such as automation, power electronics, motor control, and renewable energy installations.
This device supports continuous drain currents up to 200A and can handle a maximum drain-source voltage of 40V, making it suitable for robust power management solutions. Its low drain-source resistance of 3 milliohms ensures minimal power losses, contributing to higher efficiency in power conversion and switching tasks.
Constructed in a 3-pin TO-220 through-hole package, the IRL1404ZPBF simplifies mounting and integration into circuit boards, retaining mechanical strength under demanding industrial conditions. It operates efficiently within a broad temperature range of -55°C to +175°C, supporting applications exposed to extreme thermal environments.
The MOSFET features a gate threshold voltage of 2.7V, gate source voltage tolerance from -16 to +16 volts, and a typical gate charge of 75nC facilitating high switching speeds and reliable device control. Maximum power dissipation rating stands at 230W, emphasizing its capacity in energy-intensive designs.
Capable of handling continuous drain currents up to 200A. Low drain-source resistance enhances efficiency and reduces heat generation. Wide operating temperature range from -55°C to 175°C. 3-pin TO-220 through-hole packaging for sturdy installation.
High power dissipation of 230W for demanding electrical loads. Typical gate charge of 75nC allows for fast switching. Gate voltage tolerance between -16V and +16V for operational safety. A forward voltage of 1.3V ensures effective conduction.
Ideal for motor control circuits, power amplifiers, and DC-DC converters. Applicable in automotive and renewable energy sectors for efficient power management.
This Infineon HEXFET MOSFET is a preferred choice in industrial, laboratory, construction, and HVAC applications, providing reliable switching and power handling capabilities. Its robust design and proven performance make it suitable for electronic engineers aiming for efficiency and durability in their power electronic designs.
Explore more discrete semiconductor components and MOSFETs within the Infineon product range available at EnvMart for varied industrial and technical needs.
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