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Infineon HEXFET N-Channel MOSFET 200A 40V Enhancement Mode 3-Pin TO-220 IRL1404ZPBF

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.66mm
Model IRL1404ZPBF
Width 4.4mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
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RS Stock No. 688-7178Brand: InfineonManufacturers Part No.: IRL1404ZPBF
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 200A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 230W
Typical Gate Charge Qg @ Vgs 75nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V

Key Features

  • Capable of handling continuous drain currents up to 200A.
  • Features a low drain-source on-resistance of 3 milliohms enhancing efficiency.
  • Designed in a 3-pin TO-220 through-hole package for easy mounting.
  • Operates reliably within a wide temperature range from -55°C to +175°C.
  • Maximum power dissipation of 230W ensures high energy handling.
  • Typical gate charge of 75 nanocoulombs supports high switching speeds.
  • Maximum gate source voltage rating from -16V to +16V provides protection.
  • Forward voltage drop of 1.3V ensures efficient conduction.

Product Description

Infineon IRL1404ZPBF HEXFET N-Channel MOSFET is a semiconductor device engineered for high current and power dissipation applications. Designed with an enhancement mode channel and N-type conduction, it provides dependable operation in various industrial contexts such as automation, power electronics, motor control, and renewable energy installations.

This device supports continuous drain currents up to 200A and can handle a maximum drain-source voltage of 40V, making it suitable for robust power management solutions. Its low drain-source resistance of 3 milliohms ensures minimal power losses, contributing to higher efficiency in power conversion and switching tasks.

Constructed in a 3-pin TO-220 through-hole package, the IRL1404ZPBF simplifies mounting and integration into circuit boards, retaining mechanical strength under demanding industrial conditions. It operates efficiently within a broad temperature range of -55°C to +175°C, supporting applications exposed to extreme thermal environments.

The MOSFET features a gate threshold voltage of 2.7V, gate source voltage tolerance from -16 to +16 volts, and a typical gate charge of 75nC facilitating high switching speeds and reliable device control. Maximum power dissipation rating stands at 230W, emphasizing its capacity in energy-intensive designs.

Capable of handling continuous drain currents up to 200A. Low drain-source resistance enhances efficiency and reduces heat generation. Wide operating temperature range from -55°C to 175°C. 3-pin TO-220 through-hole packaging for sturdy installation.

High power dissipation of 230W for demanding electrical loads. Typical gate charge of 75nC allows for fast switching. Gate voltage tolerance between -16V and +16V for operational safety. A forward voltage of 1.3V ensures effective conduction.

Ideal for motor control circuits, power amplifiers, and DC-DC converters. Applicable in automotive and renewable energy sectors for efficient power management.

This Infineon HEXFET MOSFET is a preferred choice in industrial, laboratory, construction, and HVAC applications, providing reliable switching and power handling capabilities. Its robust design and proven performance make it suitable for electronic engineers aiming for efficiency and durability in their power electronic designs.

Explore more discrete semiconductor components and MOSFETs within the Infineon product range available at EnvMart for varied industrial and technical needs.

Infineon HEXFET N-Channel MOSFET 200A 40V Enhancement Mode 3-Pin TO-220 IRL1404ZPBF
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Frequently Asked Questions

This model can handle continuous drain currents up to 200A.

The maximum drain-source voltage for this MOSFET is 40V.

It features a low drain-source on-resistance of 3 milliohms, enhancing efficiency.

It operates reliably within a wide temperature range from -55°C to +175°C.

The maximum power dissipation for this model is rated at 230W.

The typical gate charge is 75 nanocoulombs, which supports high switching speeds.

It is designed in a 3-pin TO-220 through-hole package for easy mounting.

The maximum gate source voltage rating is from -16V to +16V, providing operational safety.

The forward voltage drop is 1.3V, ensuring efficient conduction.

This model is suitable for applications such as motor control circuits, power amplifiers, and DC-DC converters.

The dimensions are 10.66mm in length, 4.4mm in width, and 8.77mm in height.

It features an N-channel type with enhancement mode operation.

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