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Infineon MOSFET Gate Driver, Dual Channel, 290 mA Output Current, 8-Pin SOIC, 10V to 600V Supply, -40°C to IRS2101STRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.75mm |
| Length | 5mm |
| Model | IRS2101STRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | IRS |
| Output Current | 290mA |
| Maximum Operating Temperature | 125°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 170ns |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 8 |
| Maximum Supply Voltage | 600V |
| Minimum Supply Voltage | 10V |
| Fall Time | 90ns |
| Driver Type | MOSFET |
Key Features
- 290 mA output current ensures effective gate drive for medium-power MOSFETs.
- Operating voltage range from 10 V minimum supply to 600 V maximum supports high-voltage applications.
- Rise time of 170 ns and fall time of 90 ns enable efficient switching performance.
- Compact 8-pin SOIC surface mount package optimized for space-constrained designs.
- Temperature range from -40°C to 125°C ensures reliability in harsh environments.
- Dual independent outputs facilitate half-bridge MOSFET arrangements and isolated gate drive configurations.
- RoHS compliant design reduces hazardous material usage in assemblies.
- Suitable for industrial motor drives, power factor correction stages, and high-voltage switch-mode power supplies.
Product Description
Infineon IRS2101STRPBF is a MOSFET gate driver designed to provide reliable dual-channel control for MOSFET switching in high-voltage electronic systems. It delivers a maximum output current of 290 mA, capable of driving medium-power MOSFETs efficiently. Packaged in a compact 8-pin SOIC surface mount form factor, this device operates across a broad supply voltage range from a minimum of 10 V to a maximum of 600 V. It supports operating temperatures spanning -40°C to 125°C, making it suitable for industrial, automotive (non-automotive standard), and other demanding environments.
Featuring fast switching characteristics with a rise time of 170 ns and a fall time of 90 ns, IRS2101STRPBF enables improved efficiency by minimizing switching losses. It includes two independent output channels that facilitate applications such as half-bridge MOSFET arrangements, isolated gate driving, power factor correction stages, and industrial motor drive gate control.
Its compliance with RoHS standards ensures the device reduces hazardous substances within electronic assemblies. The surface mount SOIC package with dimensions of 5 mm length, 4 mm width, and 1.75 mm height allows integration in compact circuit designs.
The IRS2101STRPBF gate driver is ideal for use in high-voltage switch-mode power supplies and other electronic applications requiring reliable, efficient MOSFET gate control within constrained board space.
290 mA output current delivers sufficient gate drive for medium-power MOSFETs. 170 ns rise time for efficient MOSFET turn-on switching. 90 ns fall time ensures timely MOSFET turn-off to reduce losses. Supports operation from 10 V to 600 V supply voltage.
Wide ambient temperature range from -40°C to 125°C for robust environmental tolerance. Compact 8-pin surface mount SOIC package for space-saving PCB layout. Two independent output channels for dual MOSFET control. RoHS compliant to meet environmental regulations.
Explore more power management integrated circuits and MOSFET Gate Drivers on EnvMart to find suitable components for your industrial, construction, automotive, or electronic manufacturing needs.
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Frequently Asked Questions
The IRS2101STRPBF has a maximum output current of 290 mA, which is suitable for driving medium-power MOSFETs effectively.
This model operates within a supply voltage range of 10 V to 600 V, making it suitable for high-voltage applications.
The rise time is 170 ns and the fall time is 90 ns, which contribute to efficient switching performance.
It operates within a temperature range of -40°C to 125°C, ensuring reliability in harsh environments.
This model features two independent output channels, allowing for dual MOSFET control.
It comes in a compact 8-pin SOIC surface mount package, optimized for space-constrained designs.
Yes, it is RoHS compliant, which reduces the use of hazardous materials in electronic assemblies.
This gate driver is suitable for industrial motor drives, power factor correction stages, and high-voltage switch-mode power supplies.
The dimensions are 5 mm in length, 4 mm in width, and 1.75 mm in height.
It is a MOSFET driver designed to provide reliable control for MOSFET switching in high-voltage electronic systems.
The fast rise time of 170 ns and fall time of 90 ns minimize switching losses, enhancing overall efficiency during operation.
The country of origin for this product is India.
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