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Infineon MOSFET Gate Driver, Dual Channel, 200mA Output Current, 8-Pin SOIC, 5-20V Supply, -40 to 150°C IRS2301STRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.75mm |
| Length | 4.98mm |
| Model | IRS2301STRPBF |
| Width | 3.99mm |
| Mount Type | Surface |
| Series | IRS |
| Output Current | 200mA |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 220ns |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 5V |
| Fall Time | 80ns |
| Driver Type | MOSFET |
Key Features
- Supports supply voltage range from 5 V to 20 V for versatile operation.
- Dual-channel MOSFET control with independent outputs enhances flexibility.
- Fast switching performance with 220 ns rise time and 80 ns fall time.
- Designed for surface-mount PCB placement with compact 8-pin SOIC packaging.
- Wide operating temperature range from -40°C to 150°C ensures reliability in harsh environments.
- Ideal for driving power MOSFETs in motor control and DC-DC converters.
- Reliable pulse shaping and output drive suitable for switch-mode power supplies.
- Compliance with RoHS standards assures environmental safety.
Product Description
Infineon IRS2301STRPBF MOSFET Gate Driver is a dual-output gate driver IC designed for precise control of MOSFETs in power management applications. It supports a supply voltage range from 5 V minimum to 20 V maximum, making it suitable for various electronic circuits including motor-control stages, DC-DC converters, and switch-mode power supplies.
The device features two independent output channels, each capable of sourcing and sinking 200 mA output current, ensuring robust gate drive capability for efficient switching. With a rapid rise time of 220 ns and a fall time of 80 ns, the IRS2301STRPBF reduces switching losses and improves overall circuit efficiency.
Encased in a compact 8-pin SOIC surface-mount package, this gate driver simplifies PCB layout and assembly. Its industrial-grade temperature range from -40°C up to 150°C supports high-reliability operation in challenging environments.
This product complies with RoHS standards and is optimized for low-voltage logic-level supply control systems. Its integrated pulse shaping improves signal fidelity and switching performance.
Supports 5 V to 20 V supply voltage. Dual independent MOSFET output channels with 200 mA drive current. Fast switching with 220 ns rise time and 80 ns fall time. Compact 8-pin SOIC package suitable for surface mounting. Wide operating temperature range from -40°C to 150°C.
Ideal for motor control, DC-DC converters, and power supplies. RoHS compliant for environmental safety. Reliable pulse shaping and driving capability.
This Infineon MOSFET gate driver IC is essential for engineers looking to achieve efficient and reliable power switching in industrial, automotive, and commercial electronic systems. Explore more Gate Drivers and power management ICs in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
This model features dual independent output channels, each capable of sourcing and sinking 200 mA output current.
The rise time is 220 ns and the fall time is 80 ns, which helps reduce switching losses.
This model is encased in a compact 8-pin SOIC surface-mount package, suitable for PCB placement.
It has two independent output channels, enhancing flexibility in control applications.
Yes, it complies with RoHS standards, assuring environmental safety.
The dimensions are 1.75 mm in height, 4.98 mm in length, and 3.99 mm in width.
It is designed for surface mounting, facilitating easy assembly on PCBs.
It is a MOSFET driver, specifically designed for efficient gate control in power management circuits.
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