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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.64mm |
| Length | 7.59mm |
| Model | STGAP2HSCMTR |
| Width | 6.05mm |
| Mount Type | Surface |
| Output Current | 4A |
| Maximum Operating Temperature | 125°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 5 |
| Rise Time | 30ns |
| Pin Count | 8 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 3.1V |
| Number of Drivers | 1 |
| Fall Time | 30ns |
| Driver Type | MOSFET |
| Driver current capability | 4 A sink/source @25°C |
| Overall input-output propagation delay | 75 ns |
STMicroelectronics STGAP2HSCMTR MOSFET Gate Driver is a high-performance device designed for power conversion and motor driver inverters in industrial applications. It delivers a 4 A sink/source output current capability at 5.5 V supply, using an 8-pin SO-8 surface mount package for compact PCB designs. This single gate driver offers galvanic isolation between the gate driving channel and low voltage control circuits, enhancing system safety and noise immunity.
The device is available in two configurations: one with separated output pins to independently optimize turn-on and turn-off via dedicated gate resistors, and another with a single output pin plus a Miller clamp feature to prevent gate voltage spikes during fast switching commutations, especially useful in half-bridge topologies. Both configurations facilitate design flexibility and reduce external component count.
Robust features include undervoltage lockout (UVLO), temperature shut-down protection, and standby functionality. The driver operates reliably across a temperature range from -40°C to 125°C, suitable for harsh industrial environments. Electrical characteristics include a fast rise and fall time of 30 ns, overall input-output propagation delay of 75 ns, and high transient immunity of ±100 V/ns. The compact SO-8 package dimensions are 7.59 mm length, 6.05 mm width, and 2.64 mm height, supporting efficient surface mount assembly.
This MOSFET Gate Driver is ideal for driving power MOSFETs in automotive, industrial motor control, power conversion, and other high-performance power management applications. The product’s galvanic isolation and advanced driver configurations support reliable and efficient power electronics designs.
Offers 4 A sink/source driver current suitable for mid to high power applications. Features rail-to-rail outputs ensuring efficient switching performance. Includes galvanic isolation for protection between control circuitry and output.
Available in configurations with separated output pins or single output pin with Miller clamp. Supports wide operating temperature range from -40°C to 125°C for industrial use. Equipped with undervoltage lockout (UVLO) and thermal shut-down protection.
Minimal propagation delay of 75 ns for high-speed switching. Compact SO-8 surface mount package measuring 7.59 mm x 6.05 mm x 2.64 mm. Transient immunity of ±100 V/ns ensures robustness against voltage spikes. Explore the Electronics & Electricals category on EnvMart for more power management ICs and semiconductor devices.
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