$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay Type P-Channel MOSFET, 214 A, 40 V Enhancement Mode, 8-Pin PowerPAK 1212-8W Package SQS405CENW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SQS405CENW-T1_GE3 |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK 1212-8W |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 197W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET operates in enhancement mode with a maximum gate source voltage of 20 V.
- The package type is surface mount with a length of 3.3 mm for compact PCB integration.
- Maximum power dissipation is rated at 197 W to support high power applications.
- The device features a low drain-source resistance of 0.02 Ω for efficient conduction.
- Operating temperature ranges from -55°C to 125°C, allowing automotive-grade performance compliant with AEC-Q101.
- Typical gate charge at Vgs is 38 nC ensuring fast switching capabilities.
- Forward voltage drop is specified at 1.1 V aiding low conduction losses.
- Pin count is 8 pins facilitating reliable connection in power circuits.
Product Description
Vishay SQS405CENW-T1_GE3 is a high-performance P-Channel MOSFET designed for demanding industrial and automotive applications. It features an 8-pin PowerPAK 1212-8W surface mount package providing a compact footprint suitable for high-density PCB layouts. Rated for a maximum continuous drain current of 214 A and a drain-source voltage of 40 V, this device operates in enhancement mode and supports operation in harsh environments with temperatures ranging from -55°C to 125°C.
The MOSFET's ultra-low drain-source resistance of 0.02 Ω minimizes conduction losses, which is critical for power efficiency in automotive powertrains, battery management systems, and industrial motor drives. Additionally, its typical gate charge of 38 nC at the gate threshold allows rapid switching and reduced switching losses, making it suitable for high-frequency applications.
The power dissipation capability of 197 W ensures the MOSFET can handle substantial power loads without thermal overload. The forward voltage drop of 1.1 V further enhances efficiency by reducing voltage loss during conduction. The device complies with AEC-Q101 automotive standards, confirming reliability in automotive environments.
This MOSFET is ideal for use in power management, DC/DC converters, load switching, and general-purpose automotive electronics. Its surface mount PowerPAK 1212-8W package facilitates automated assembly and robust thermal performance.
This MOSFET operates in enhancement mode with a maximum gate source voltage of 20 V. The package type is surface mount with a length of 3.3 mm for compact PCB integration. Maximum power dissipation is rated at 197 W to support high power applications.
The device features a low drain-source resistance of 0.02 Ω for efficient conduction. Operating temperature ranges from -55°C to 125°C, allowing automotive-grade performance compliant with AEC-Q101. Typical gate charge at Vgs is 38 nC ensuring fast switching capabilities.
Forward voltage drop is specified at 1.1 V aiding low conduction losses. Pin count is 8 pins facilitating reliable connection in power circuits. Discover more high-quality semiconductor components and MOSFETs at EnvMart for your automotive, industrial, and electronics design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 214 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The operating temperature range for this unit is from -55°C to 125°C.
It is rated for a maximum power dissipation of 197 W.
The typical gate charge at Vgs is 38 nC.
The forward voltage drop is specified at 1.1 V.
This MOSFET features a pin count of 8.
It comes in a PowerPAK 1212-8W surface mount package.
This device complies with the AEC-Q101 automotive standard.
The maximum drain-source resistance is 0.02 Ω.
The maximum gate-source voltage is 20 V.
Related Products
Other Products from this brand
$1.64
$1.59
-3%
New
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent