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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STGP7NC60HD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 80W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
STMicroelectronics STGP7NC60HD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring efficient and fast switching. This 3-pin discrete power electronic device is housed in a TO-220 package, optimized for through-hole mount technology, enabling robust integration into a variety of industrial, manufacturing, and electronic power control systems.
With a maximum continuous collector current rating of 25 amperes and a maximum collector-emitter voltage of 600 volts, the STGP7NC60HD is capable of handling medium power loads with superior efficiency. It features a maximum power dissipation of 80 watts, making it suitable for a diverse range of electrical and electronic applications requiring stable power switching and control.
The device operates safely across a wide temperature range from -55°C up to 150°C, ensuring reliability in demanding industrial and environmental conditions. The maximum gate-emitter voltage rating of 20 volts ensures controlled and safe drive voltages for efficient transistor operation. Additionally, the maximum collector-emitter saturation voltage of 2.5 volts allows for reduced power loss during conduction.
Its compact physical dimensions (length 10.4 mm, height 9.15 mm, width 4.6 mm) enable space-efficient designs in power electronics and semiconductor assemblies.
The STGP7NC60HD IGBT by STMicroelectronics combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation voltage capabilities of bipolar transistors, making it an excellent choice for power control in industrial, electrical, and electronic equipment, including motor drives, inverters, and power supplies.
Features a TO-220 3-pin through hole package for easy mounting. High switching speed up to 1 MHz suitable for fast power electronics. Robust temperature tolerance ensuring reliable operation in harsh environments. Low saturation voltage for improved energy efficiency.
Ideal for use in industrial electronics, power management, and semiconductor discrete components applications. Discover more industrial electronic components and power semiconductors in the EnvMart catalog for reliable and efficient solutions.
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