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onsemi QFET N-Channel MOSFET 5.5 A 800 V Enhancement Mode 3-Pin TO-220 FQP6N80C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP6N80C |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 2.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 158W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
| N-Channel MOSFET Transistor, 4.8 A, 800 V, 3-Pin TO-220AB Fairchild FQP5N80Brand | Fairchild Semiconductor |
Key Features
- The MOSFET operates in enhancement mode with a channel type of N.
- It features a low maximum drain-source resistance of 2.5 ohms for efficient current conduction.
- Maximum power dissipation is rated at 158 W, suitable for high power applications.
- Typical gate charge of 21 nC reduces switching losses for improved efficiency.
- It supports a wide operating temperature range from -55°C to 150°C.
- The device is intended for through-hole mounting, simplifying PCB assembly.
- Maximum gate-source voltage is ±30 V, ensuring robust gate protection.
- Physical dimensions are approximately 10.1 mm length, 4.7 mm width, and 9.4 mm height.
Product Description
onsemi FQP6N80C is a QFET® N-Channel MOSFET transistor designed for high-voltage and high-current switching applications. With a maximum continuous drain current of 5.5 A and a drain-source voltage rating of 800 V, it is ideal for efficient power management and control in electronic circuits.
This enhancement mode MOSFET utilizes advanced planar QFET technology to minimize on-resistance (Rds) to 2.5 ohms, thereby reducing conduction losses and improving overall efficiency.
The device offers a maximum power dissipation of 158 W, supported by a robust operation temperature range from -55°C to 150°C, enabling reliable performance in demanding industrial, automotive, and commercial environments.
The typical gate charge of 21 nC and maximum gate-source voltage tolerance of ±30 V facilitate fast switching and enhanced noise immunity.
The 3-pin TO-220 package provides ease of installation with through-hole mounting and compact form factor measuring 10.1 mm in length, 4.7 mm in width, and 9.4 mm in height. This form factor supports effective thermal management and mechanical stability.
onsemi QFET MOSFETs find broad application in power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems due to their low switching and conduction losses.
The MOSFET operates efficiently at high voltage and current ratings. Advanced QFET planar technology lowers on-state and switching losses. Wide temperature range ensures reliability in harsh conditions. Compact TO-220 package supports effective installation and heat dissipation.
Suitable for industrial, automotive, and commercial electronic applications. Explore additional onsemi power semiconductor devices and MOSFETs in the EnvMart electronics category for comprehensive component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for the FQP6N80C is 5.5 A.
This model has a maximum drain-source voltage rating of 800 V.
The maximum power dissipation for the FQP6N80C is rated at 158 W.
The typical gate charge for the FQP6N80C is 21 nC.
The dimensions of the FQP6N80C are approximately 10.1 mm in length, 4.7 mm in width, and 9.4 mm in height.
The maximum gate-source voltage for the FQP6N80C is ±30 V.
The FQP6N80C operates within a temperature range of -55°C to 150°C.
This model is designed for through-hole mounting, simplifying PCB assembly.
The FQP6N80C features an N-channel type for its operation.
The maximum drain-source resistance for the FQP6N80C is 2.5 ohms.
This MOSFET is suitable for applications in power supplies, power factor correction circuits, DC-DC converters, and more.
The FQP6N80C belongs to the QFET series of MOSFETs.
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