onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V, Enhancement Mode, 8-Pin SOIC FDS4935BZ

onsemi FDS4935BZ Isolated PowerTrench 2 Type P-Channel MOSFET is designed for high efficiency power switching in industrial and electronic applications. This enhancement mode MOSFET supports a maximum continuous drain current of 6.9 A and a maximum drain-source voltage of 30 V. Its SOIC surface-mount package with 8 pins allows easy integration in compact circuit boards.

This device features a shielded gate structure which balances charge and contributes to a low figure of merit, offering superior switching performance and increased system efficiency. The small gate charge of 29 nC enables fast switching suitable for synchronous rectification in AC/DC power supplies.

The MOSFET's soft body diode performance helps eliminate the need for snubber circuits or permits use of higher voltage rating MOSFETs leading to more compact power system designs. With a maximum power dissipation of 1.6 W and an operating temperature range from -55°C to 150°C, it reliably performs in demanding industrial, manufacturing, and HVAC environments.

Package dimensions approximately 5 mm length, 4 mm width, and 1.5 mm height make this transistor ideal for surface-mounted PCB layouts in commercial and industrial electronic devices. The device holds no automotive certification but is suitable for various discrete semiconductor applications where isolated P-Channel MOSFET performance is required.

This product complements a wide range of semiconductor components and power management solutions, supporting efficient energy conversion and power density improvements in industrial electronics, water treatment, automation controls, and other technical domains.

Type P enhancement mode MOSFET designed for efficient power switching applications. Maximum continuous drain current of 6.9 amperes. Maximum drain-source voltage rating of 30 volts for robust operation. Low typical gate charge of 29 nC ensures fast switching performance.

Maximum power dissipation of 1.6 watts allowing for reliable thermal management. Operating temperature range from -55°C to 150°C supports harsh environments. Surface mount SOIC package with 8 pins suitable for compact PCB designs.

Isolated transistor configuration with a shielded gate structure for enhanced efficiency. Forward voltage of -0.8 V and maximum gate-source voltage ranging from -25V to +25V. Dual elements per chip improve performance and system density.

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