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onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement Mode, 3-Pin TO-220 Package FQP47P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.1mm |
| Model | FQP47P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Designed for high efficiency with low gate charge and low on-resistance.
- Operates at temperatures from -55°C up to 175°C.
- Enhancement mode channel type for controlled switching applications.
- Maximum power dissipation up to 160 watts for robust performance.
- Typical gate charge of 84 nanocoulombs at Vgs.
- Maximum gate-source voltage of ±25 volts.
- Compact TO-220 through-hole mounting package.
- Suitable for power supplies, DC-DC converters, PFC, and motion control.
Product Description
onsemi FQP47P06 is a high-performance P-Channel QFET MOSFET transistor engineered for demanding discrete semiconductor applications. It supports a continuous drain current of 47 amperes and withstands a maximum drain-source voltage of 60 volts, operating efficiently within an industrial temperature range from -55°C to 175°C.
Packaged in a standardized 3-pin TO-220 form factor, this device offers low on-state resistance of 26 milliohms, resulting in minimized conduction losses, and features an enhancement mode channel for precise and reliable switching control.
The transistor's typical gate charge is 84 nanocoulombs at the gate-source voltage, with maximum tolerances of ±25 volts, facilitating fast switching and high-frequency operation. Its power dissipation rating of 160 watts ensures it can manage significant thermal loads in power electronics applications.
onsemi's QFET technology is widely applied in power supplies, power factor correction (PFC) circuits, DC-DC converters, plasma display panels, lighting ballasts, and advanced motion control systems, supporting industrial, laboratory, and manufacturing environments.
Low gate charge reduces switching losses improving efficiency. Robust thermal capacity for reliable operation in elevated temperatures. Through-hole mounting simplifies installation and heat dissipation. Compact TO-220 package suitable for diverse electronic circuits.
High current and voltage ratings for power applications. Enhancement mode for stable transistor conduction control. Durable construction ensuring long operational lifespan. Ideal for industrial power electronics and electronic component designs.
This FQP47P06 P-Channel MOSFET by onsemi represents a versatile solution for engineers requiring reliable, high-current semiconductor switching devices. Explore more MOSFET components at EnvMart for your electronics and industrial projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 amperes.
It can withstand a maximum drain-source voltage of 60 volts.
The maximum power dissipation rating is 160 watts.
The typical gate charge is 84 nanocoulombs at the gate-source voltage.
This model operates efficiently within a temperature range from -55°C to 175°C.
The on-state resistance is 26 milliohms, which helps minimize conduction losses.
It is packaged in a standardized 3-pin TO-220 form factor.
The maximum gate-source voltage is ±25 volts.
This MOSFET uses a through-hole mounting type for installation.
It features a P-Channel type for controlled switching applications.
It is suitable for applications such as power supplies, DC-DC converters, and motion control.
The height is 9.4 mm and the width is 4.7 mm.
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