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STMicroelectronics STripFET II N-Channel MOSFET 80 A 55 V Enhancement 3-Pin TO-263 STB80NF55L-06T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB80NF55L-06T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Offers ultra-low gate charge of 100 nC at Vgs.
- Features low on-resistance with maximum Rds(on) of 7 mΩ.
- Supports maximum power dissipation of 300 W for high efficiency.
- Operates within a temperature range of -55°C to 175°C.
- Designed for surface mount applications with a pin count of 3.
- Includes a maximum gate-source voltage rating of -16 V to +16 V.
- Forward voltage is 1.3 V, ensuring efficient conduction.
Product Description
STMicroelectronics STB80NF55L-06T4 is a high-performance N-Channel STripFET™ II MOSFET designed for demanding industrial and electronic applications. With a maximum continuous drain current of 80 A and a drain-source voltage rating of 55 V, this device is optimized for power switching and amplification tasks in power management circuits.
The MOSFET features an enhancement-mode channel with ultra-low gate charge of 100 nC at Vgs, facilitating fast switching speeds and reduced power loss. Its low on-resistance of 7 milliohms enhances efficiency in high current operations, making it suitable for use in industrial power supplies, motor controllers, and audio amplifiers.
The device comes in a 3-pin TO-263 surface mount package, offering compact dimensions of 10.4 mm length, 9.35 mm width, and 4.6 mm height, which aids in board space optimization. Its robust construction supports a wide operating temperature range from -55°C to 175°C, ensuring reliability in harsh environments such as automotive electronics, industrial control systems, and HVAC equipment.
Additional electrical characteristics include a maximum power dissipation of 300 W and a maximum gate-source voltage between -16 V and +16 V. The forward voltage drop of 1.3 V ensures efficient conduction during operation.
Ultra-low gate charge improves switching performance. Low on-resistance reduces conduction losses. High power dissipation capability supports heavy load applications. Wide operating temperature range ensures reliability.
Compact TO-263 package for efficient PCB design. Suitable for industrial, automotive, and power management applications. Maximum gate-source voltage rating protects against voltage spikes. Forward voltage characteristic optimizes conduction efficiency.
This MOSFET is a reliable discrete semiconductor for electronic engineers and manufacturers seeking efficient electronic switching components. It supports various designs requiring high current and fast switching with stability under thermal stress.
Discover more about STMicroelectronics MOSFETs and related semiconductor components on EnvMart for quality assurance and competitive pricing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
The maximum drain-source voltage rating is 55 V.
It has a maximum on-resistance of 7 mΩ, which enhances efficiency in high current operations.
The typical gate charge at Vgs is 100 nC, facilitating fast switching speeds.
This MOSFET operates within a temperature range of -55°C to 175°C.
It comes in a 3-pin TO-263 surface mount package.
The maximum power dissipation for this model is 300 W, supporting high-efficiency applications.
The forward voltage drop is 1.3 V, ensuring efficient conduction during operation.
The maximum gate-source voltage rating is between -16 V and +16 V.
The dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
This model utilizes an N-channel enhancement mode.
The country of origin for this MOSFET is India.
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