onsemi UniFET N-Channel Enhancement MOSFET, 61 A, 200 V, TO-220, 3-Pin FDP61N20

onsemi FDP61N20 UniFET N-Channel MOSFET is a high-performance enhancement mode transistor optimized for power switching and converter applications. This device is part of the UniFET family, recognized for having the smallest on-state resistance among planar MOSFETs, coupled with superior switching speed and enhanced avalanche energy capability.

Its internal gate-source ESD diode enables the MOSFET to withstand surge stresses exceeding 2000 V HBM, contributing to device robustness in applications requiring high reliability. The transistor supports a maximum continuous drain current of 61 A and can tolerate drain-source voltages up to 200 V, making it suitable for a variety of power management tasks in industrial and consumer electronics.

The TO-220 three-pin package provides a standard through-hole mounting option widely compatible with many PCB designs. With a maximum power dissipation of 417 W and operating temperature range from -55°C to 150°C, the FDP61N20 is designed to maintain performance under thermal stress and high load conditions.

Key features such as low drain-source resistance (41 mΩ), typical gate charge at 58 nC, and a forward voltage of 1.4 V contribute to efficient power conversion and fast switching capabilities. The compact physical dimensions facilitate space-saving designs.

This MOSFET is ideally used in switching power converters, power factor correction circuits, display power supplies, ATX power supplies, and electronic lamp ballasts. Its reliable performance also suits industrial, laboratory, and manufacturing equipment where compact, efficient power management components are essential.

Supports a maximum continuous drain current of 61 A for robust current handling. Operates with a maximum drain-source voltage of 200 V suitable for high voltage applications. Features a low maximum drain-source resistance of 41 mΩ to minimize power losses.

Packaged in a durable TO-220 type with through-hole mount for easy board integration. Designed to operate in temperatures from -55°C to 150°C ensuring reliability in harsh environments. Typical gate charge of 58 nC enables fast switching performance.

Maximum power dissipation rating of 417 W to support demanding power conversion tasks. Internal gate-source ESD diode provides protection against voltage surges up to 2000 V HBM. Compact dimensions with length 10.67 mm, width 4.83 mm, and height 9.4 mm facilitate efficient PCB layouts.

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