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onsemi P-Channel Enhancement Mode MOSFET 60 V, 2.5 A, 3W 4-Pin SOT-223 Package NDT2955

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onsemi P-Channel Enhancement Mode MOSFET 60 V, 2.5 A, 3W 4-Pin SOT-223 Package NDT2955

Name: onsemi P-Channel Enhancement Mode MOSFET 60 V, 2.5 A, 3W 4-Pin SOT-223 Package NDT2955
Brand: onsemi
SKU: 347541
Price: 0.53 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.6mm
Length	6.5mm
Model	NDT2955
Width	3.56mm
Mount Type	Surface
Series	NDT
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	2.5A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3W
Typical Gate Charge Qg @ Vgs	11nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

Features high-density DMOS technology for low on-state resistance and rapid switching performance.
Enhanced ruggedness ensures reliable operation in demanding electrical circuits.
Encapsulated in a 4-pin SOT-223 surface-mount package for compact footprint.
Operates safely within -55°C to 150°C temperature range for versatile industrial use.
Suitable for load switching, battery protection, DC/DC converters, and PWM motor control applications.
Maximum power dissipation of 3 watts supports moderate power handling in compact equipment.
Low forward gate voltage of -1.2 volts improves switching efficiency.
Includes typical gate charge of 11 nanoCoulombs promoting fast switching capability.

Product Description

onsemi NDT2955 is a P-Channel Enhancement Mode MOSFET designed to provide efficient switching with a maximum drain-source voltage of 60 V and drain current rating of 2.5 A. It features ON Semi's proprietary high cell density DMOS technology that delivers low on-resistance and rugged reliability, making it suitable for industrial and power management applications.

This device is enclosed in a compact 4-pin SOT-223 surface mount package with dimensions of approximately 6.5 mm length, 3.56 mm width, and 1.6 mm height, making it well-suited for space-constrained PCB layouts. The MOSFET supports continuous operation over a wide temperature range from -55°C to 150°C, enabling rugged performance in various environmental conditions.

Key applications include load switching, DC/DC converters, battery protection circuits, power management controls, and motor control in industrial, electronics manufacturing, and automotive systems (non-automotive certified). The device offers a maximum power dissipation of 3 watts and a typical gate charge of 11 nC for fast and efficient switching performance.

The MOSFET supports gate-source voltages from -20 V to +20 V, with a low forward gate voltage of -1.2 V that helps reduce switching losses. It is engineered for use in commercial and industrial electronics requiring energy-efficient, reliable power switching components.

High-density DMOS structure minimizes on-state resistance for efficient switching. P-Channel enhancement mode operation allows voltage-controlled switching. Surface mount SOT-223 package reduces board space and supports automated assembly.

Wide operating temperature range from -55°C to 150°C. Designed for rugged and reliable electrical performance in power management tasks. Typical gate charge of 11nC promotes rapid switching suitable for PWM control. Applications include load switching, DC/DC converters, battery and power management protection circuits, and motor control.

This product offers a high-quality, compact solution for discrete semiconductor switching needs in industrial, electronic component manufacturing, and power supply applications. Browse EnvMart's extensive semiconductor selection for compatible MOSFET devices and electronic components.