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onsemi N-Channel MOSFET 14 A 50 V Enhancement Mode 3-Pin TO-252 RFD14N05LSM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | RFD14N05LSM |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET supports a maximum continuous drain current of 14 amperes.
- Maximum drain-source voltage rating of 50 volts ensures reliable switching applications.
- It is housed in a compact TO-252 package with three pins designed for surface mounting.
- The device features a low on-resistance of 100 milliohms to minimize power loss.
- The maximum power dissipation capability is 48 watts for robust thermal performance.
- Its operating temperature ranges from -55°C to 175°C for wide environmental tolerance.
- The gate-source voltage is rated at ±10 volts for reliable gate control.
- The transistor utilizes enhancement mode N-channel technology for efficient switching.
Product Description
onsemi RFD14N05LSM is an enhancement mode N-Channel MOSFET designed for efficient power switching in electronic circuits. Featuring a maximum continuous drain current of 14 amperes and a maximum drain-source voltage of 50 volts, this device operates reliably under high power conditions.
Encapsulated in a TO-252 surface mount package with three pins, the MOSFET is compact and suitable for automated PCB assembly. Its low on-resistance value of 100 milliohms minimizes conduction losses, improving overall energy efficiency.
The device exhibits a maximum power dissipation of 48 watts and can operate in a wide temperature range from -55°C to 175°C, making it suitable for harsh environments in industrial, automotive, and consumer applications. The gate-source voltage rating of ±10 volts ensures stable switching and protection against voltage spikes.
This MOSFET uses onsemi's proprietary high cell density DMOS technology, delivering rugged performance, fast switching, and reliability for power conversion, motor control, and load switching tasks.
Physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height make it suitable for compact designs without sacrificing performance. The typical gate charge of 40 nanocoulombs supports rapid switching speeds necessary for high-frequency power applications.
This MOSFET supports a maximum continuous drain current of 14 amperes. Maximum drain-source voltage rating of 50 volts ensures reliable switching applications. Housed in TO-252 surface mount package with three pins. Low on-resistance of 100 milliohms reduces power losses.
Maximum power dissipation capability of 48 watts. Operating temperature from -55°C to 175°C. Gate-source voltage rating of ±10 volts for gate protection. Enhancement mode N-channel technology. Compact physical dimensions: 6.73 mm x 6.22 mm x 2.39 mm.
Typical gate charge of 40 nanocoulombs enables fast switching.
Suitable for applications across industrial electronics, power management, and automotive sectors, this MOSFET offers a balance of efficiency and reliability. Explore similar semiconductor devices and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes.
This MOSFET has a maximum drain-source voltage rating of 50 volts.
It is housed in a TO-252 surface mount package with three pins.
The on-resistance of this MOSFET is 100 milliohms, which helps minimize power loss.
The maximum power dissipation capability of this unit is 48 watts.
It operates within a temperature range from -55°C to 175°C.
The gate-source voltage rating is ±10 volts, ensuring reliable gate control.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The typical gate charge is 40 nanocoulombs, supporting rapid switching speeds.
It utilizes enhancement mode N-channel technology for efficient switching.
This model is suitable for applications in industrial electronics, power management, and automotive sectors.
The country of origin for this device is India.
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