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onsemi QFET N-Channel MOSFET, 1.7 A, 100 V, Enhancement Type, 4-Pin SOT-223 Package FQT7N10LTF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | FQT7N10LTF |
| Width | 3.56mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 4.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This 4-pin SOT-223 package ensures efficient surface mounting on PCBs.
- The device operates in enhancement mode, suitable for switching and amplification applications.
- Maximum power dissipation is rated at 2 W for stable operation under load.
- Wide operating temperature range from -55°C to 150°C ensures durability in harsh environments.
- Low maximum drain-source resistance of 350 mΩ reduces conduction losses.
- Typical gate charge of 4.6 nC optimizes switching speed and efficiency.
- Maximum gate-source voltage tolerance of ±20 V protects against voltage spikes.
Product Description
onsemi FQT7N10LTF is a QFET N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features a maximum continuous drain current of 1.7 A and a drain-source voltage of 100 V. The SOT-223 package with 4 pins offers surface mounting capability, ideal for compact PCB layouts.
This enhancement-mode device supports power management applications such as power supplies, PFC (Power Factor Correction), DC-DC converters, lighting ballasts, and motion control systems. Advanced QFET technology reduces on-resistance and switching losses, enhancing overall system efficiency.
The MOSFET is rated for a maximum power dissipation of 2 W and can reliably operate within a temperature range of -55°C to 150°C, making it suitable for industrial, commercial, and automotive environments not requiring automotive certification.
This 4-pin SOT-223 MOSFET offers stable and efficient surface mounting. Low on-resistance of 350 mΩ contributes to energy savings. Gate charge of 4.6 nC balances switching speed and power loss. Robust gate-source voltage range of ±20 V offers circuit protection.
Compact size supports miniaturized electronic designs. Designed for power supplies, DC-DC conversion, and lighting ballast applications. Reliable operation across broad temperature ranges ensures versatility.
This product is typically used in industrial electronics, power management, consumer electronics, and laboratory equipment. It aligns with standard semiconductor specifications and does not carry specific automotive or industry certifications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.7 A.
It can handle a maximum drain-source voltage of 100 V.
This MOSFET comes in a 4-pin SOT-223 package, suitable for surface mounting.
The maximum power dissipation rating is 2 W.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage tolerance is ±20 V.
The typical gate charge is 4.6 nC.
The dimensions are 1.6 mm in height, 6.5 mm in length, and 3.56 mm in width.
The maximum drain-source resistance is 350 mΩ.
It is typically used in power management applications such as power supplies, DC-DC converters, and lighting ballasts.
This model has an N-channel type.
The mounting type for this device is surface mount.
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