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Infineon OptiMOS-T2 N-Channel MOSFET 120 A 80 V Enhancement Mode 3-Pin TO-220 IPP120N08S403AKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP120N08S403AKSA1
Width 4.57mm
Mount Type Through Hole
Series OptiMOS-T2
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 2.8mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 278W
Typical Gate Charge Qg @ Vgs 128nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • The OptiMOS-T2 series provides low on-resistance for reduced power loss.
  • Complies with AEC-Q101 automotive standard ensuring reliability and performance.
  • Features a through-hole mount type suitable for various PCB designs.
  • Operates reliably between -55°C and 175°C for demanding applications.
  • Offers a typical gate charge of 128 nC allowing fast switching performance.
  • Designed with a 3-pin TO-220 package for easy integration and heat dissipation.
  • Maximum power dissipation rating of 278 W supports high power applications.

Product Description

The Infineon IPP120N08S403AKSA1 is a high-performance OptiMOS-T2 N-Channel MOSFET designed for efficient power switching and management in industrial, automotive, and consumer electronics applications.

It supports a maximum continuous drain current of 120 A and withstands a drain-to-source voltage of 80 V, meeting the requirements for robust power delivery and control.

This enhancement mode MOSFET is housed in a 3-pin TO-220 package, facilitating through-hole mounting and effective thermal management with a power dissipation capability of up to 278 W. Its design complies with the automotive-grade AEC-Q101 standard, ensuring reliable operation in harsh environmental conditions.

The device operates over an extensive temperature range from -55°C to 175°C, making it suitable for demanding industrial and automotive environments. The typical gate charge of 128 nC allows for efficient switching with minimal losses, enhancing overall system efficiency.

The OptiMOS-T2 series is known for its low on-resistance of 2.8 mΩ, resulting in reduced conduction losses. Its forward voltage is optimized at 1.3 V for improved system performance. With a maximum gate-to-source voltage of 20 V, it ensures safe control signal operation and longevity.

The compact dimensions of 10.36 mm length, 4.57 mm width, and 9.45 mm height allow convenient integration into various circuit designs. This MOSFET is ideal for applications in power management circuits, automotive electronic systems, industrial motor drives, and general electronic switching.

Explore EnvMart's extensive catalogue of high-quality semiconductor devices including MOSFETs like the Infineon IPP120N08S403AKSA1 for your next design or production requirement.

Infineon OptiMOS-T2 N-Channel MOSFET 120 A 80 V Enhancement Mode 3-Pin TO-220 IPP120N08S403AKSA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPP120N08S403AKSA1 is 120 A.

This model can withstand a maximum drain-to-source voltage of 80 V.

It has a maximum power dissipation rating of 278 W, suitable for high power applications.

This MOSFET operates reliably between -55°C and 175°C, making it suitable for demanding applications.

It is housed in a 3-pin TO-220 package, which facilitates through-hole mounting and effective thermal management.

The typical gate charge is 128 nC, allowing for efficient switching performance.

The on-resistance is rated at 2.8 mΩ, which contributes to reduced conduction losses.

It complies with the AEC-Q101 automotive standard, ensuring reliability and performance in automotive applications.

The maximum gate-to-source voltage is 20 V, ensuring safe operation of control signals.

The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.

This model is ideal for power management circuits, automotive electronic systems, industrial motor drives, and general electronic switching.

This MOSFET has a pin count of 3, suitable for various PCB designs.

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