onsemi QFET N-Channel MOSFET 10 A 100 V Enhancement Mode 3-Pin TO-252 FQD13N10TM

onsemi FQD13N10TM is a QFET® N-Channel Enhancement Mode MOSFET designed to deliver high-performance power switching capabilities in a compact 3-pin TO-252 surface-mount package. It provides a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100 V, making it suitable for diverse electronic applications including power supplies, power factor correction (PFC), DC-DC converters, lighting ballasts, and motion control systems.

The device utilizes advanced planar QFET technology from Fairchild Semiconductor to achieve best-in-class operating efficiency with reduced on-resistance (Rds(on)) of 180 milliohms and low typical gate charge of 12 nanocoulombs, which lower switching losses and improve overall system performance. Its maximum power dissipation rating of 2.5 watts enables reliable operation under varying thermal conditions.

Designed for surface mounting, the FQD13N10TM features compact dimensions (6.6 mm length, 6.1 mm width, and 2.3 mm height) and operates efficiently across a wide temperature range from -55°C to +150°C. The maximum gate-source voltage rating is -25 to +25 volts, which ensures robust gate control and protection.

This MOSFET is suitable for industrial, laboratory, and commercial electronic manufacturing environments requiring reliable high power switching components. Typical use cases include power management in embedded systems, DC motor drives, and other control circuits requiring efficient switching and conduction with minimal losses.

Supports a maximum continuous drain current of 10 amperes. Maximum drain-to-source voltage of 100 volts. Low on-resistance reduces power dissipation effectively. Compact TO-252 package with a height of 2.3 mm for space-saving design.

Wide operating temperature range from -55°C to 150°C allows harsh environment use. Low gate charge enables faster switching performance. Enhancement type N-channel MOSFET for power control applications. Maximum power dissipation of 2.5 watts ensures reliability under load.

Surface mount device suitable for automated PCB assembly. Robust gate voltage tolerance between -25 V and +25 V protects the device.

Choose this onsemi QFET MOSFET for optimized energy efficiency and reliable performance in semiconductor discrete component applications. Explore more electronic components in the MOSFET category on EnvMart to support your project requirements.

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