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onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | FQD11P06TM |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 185mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -4V |
Key Features
- Operates with an enhancement mode channel for controlled switching.
- Compact TO-252 surface-mount package with 3 pins for easy PCB integration.
- Supports maximum continuous drain current of 9.4 amperes and maximum power dissipation of 2.5 watts.
- Wide operating temperature range from -55°C to 150°C suitable for various environments.
- Max gate-source voltage range of -30 to +30 volts ensuring device robustness.
- High-density DMOS technology provides rugged and reliable performance.
- Ideal for load switching, DC/DC converters, battery protection, power management, and DC motor control.
- Features a maximum drain-source resistance of 185 milliohms ensuring low conduction losses.
Product Description
onsemi FQD11P06TM is a P-Channel QFET MOSFET designed for reliable power switching applications. Using ON Semiconductor's proprietary high cell density DMOS technology, this device achieves low on-resistance and high saturation current, making it suitable for fast switching and efficient power management.
This device is packaged in a compact TO-252 surface mount format with 3 pins, facilitating easy PCB assembly for electronic and industrial applications. It offers a maximum drain current of 9.4 A and can withstand up to 60 V drain-source voltage, making it ideal for a wide range of DC load switching scenarios.
The MOSFET operates with an enhancement mode channel and supports a broad gate-source voltage range of -30 V to +30 V, delivering rugged operation even in demanding conditions. With a power dissipation of 2.5 W and operating temperature range from -55°C to 150°C, it is suited for industrial, automotive, and consumer electronic power control applications.
Applications include load switching, DC/DC converters, battery protection circuits, power management, and DC motor control systems. This transistor’s compact dimensions (6.6 mm x 6.1 mm x 2.3 mm) allow integration into space-constrained designs without sacrificing performance.
Notably, the device features a low typical gate charge of 13 nC at specified gate voltage, enabling efficient switching with minimal driver losses. The robust DMOS technology ensures long-term reliability and superior switching characteristics necessary for modern electronic designs.
Voltage-controlled P-Channel MOSFET with low on-resistance. Enhancement mode operation suited for load switching. Compact TO-252 3-pin surface mount package. Maximum continuous drain current of 9.4 A and 2.5 W power dissipation.
Wide operating temperature range for industrial applications. Maximum gate-source voltage range of -30 to +30 V. High-density DMOS construction for rugged performance. Applicable in DC/DC converters, battery protection, and motor control.
Precise dimensions for PCB footprint compatibility. Typical gate charge of 13 nC facilitates fast switching. Explore more on MOSFET devices with reliable performance and robustness suited for your industrial and commercial electronics projects on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
It can withstand a maximum drain-source voltage of 60 V.
The maximum power dissipation for this MOSFET is 2.5 W.
It comes in a TO-252 package type with 3 pins.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 13 nC.
The maximum gate-source voltage range is -30 to +30 V.
The dimensions are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.
This model uses a P-Channel enhancement mode channel.
The maximum drain-source resistance is 185 milliohms.
It is suitable for load switching, DC/DC converters, battery protection, power management, and DC motor control.
It utilizes high-density DMOS technology for rugged and reliable performance.
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