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Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, Enhancement Mode, 3-Pin IPAK IRLU024NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRLU024NPBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Enhancement mode semiconductor device ensures reliable switching.
- Supports a maximum power dissipation of 45 watts for high power applications.
- Designed for through-hole mounting with 3-pin IPAK package type.
- Low on-resistance of 65 milliohms reduces energy losses and improves efficiency.
- Operates effectively between -55°C and 175°C, suitable for harsh environments.
- Maximum gate-source voltage of ±16 V allows flexible control signals.
- Compact dimensions facilitate integration into various electronic circuits.
- Applicable in motor control systems, switch-mode power supplies, and industrial automation.
Product Description
Infineon IRLU024NPBF HEXFET N-Channel MOSFET is a high-performance power semiconductor device engineered for demanding electrical and mechanical applications. It supports a maximum continuous drain current of 17 amperes and a maximum drain-source voltage of 55 volts, making it suitable for robust power switching and control.
Featuring enhancement mode operation and a compact 3-pin IPAK package, this device enables versatile through-hole mounting for ease of installation. It boasts a low drain-source resistance of 65 milliohms, minimizing conduction losses and enhancing overall circuit efficiency.
The MOSFET can safely dissipate up to 45 watts of power and functions reliably within a wide temperature range from -55°C to 175°C. Its maximum gate-source voltage rating of ±16 volts supports diverse gate drive requirements.
Typical applications include motor control systems, switch-mode power supplies, industrial automation equipment, and consumer electronics where efficient power regulation is crucial. The device's rugged design makes it particularly suited to environments with thermal and mechanical stress.
Enhancement mode semiconductor device ensuring robust switching. Maximum continuous drain current of 17 amperes. Maximum drain-source voltage of 55 volts. Low Rds(on) value of 65 milliohms for better efficiency. Supports high power dissipation of 45 watts.
Wide operating temperature range of -55°C to 175°C. 3-pin IPAK package suitable for through-hole mounting. Maximum gate-source voltage of ±16 volts. Compact dimensions (6.73 mm length × 2.39 mm width × 6.22 mm height).
This Infineon MOSFET is ideal for applications in industrial automation, electrical power management, and high-performance electronic devices. Its design supports efficient, high-current load handling with reduced thermal losses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 amperes.
This MOSFET supports a maximum drain-source voltage of 55 volts.
It is designed in a 3-pin IPAK package type, suitable for through-hole mounting.
The operating temperature range is from -55°C to 175°C.
It can dissipate a maximum power of 45 watts.
The low drain-source resistance is 65 milliohms, which helps improve efficiency.
The maximum gate-source voltage is ±16 volts.
The dimensions are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.
Typical applications include motor control systems, switch-mode power supplies, and industrial automation equipment.
This model features an N-channel configuration.
The typical gate charge at Vgs is 15 nanocoulombs.
This model is part of the HEXFET series.
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