$0.60
$0.58
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V, Enhancement Mode, 8-Pin SOIC Package FDS6675BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6675BZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET Transistor, 17 A, 30 V, 8-Pin SOIC Diodes Inc ZXMP3F35N8TABrand | DiodesZetex |
Key Features
- Features an enhancement channel mode for efficient switching.
- Comes in an 8-pin SOIC surface mount package.
- Maximum continuous drain current of 11 amperes for high power applications.
- Low drain-source resistance of 13 milliohms reduces conduction losses.
- Maximum power dissipation of 2.5 watts supports robust thermal management.
- Operating temperature ranges from -55°C to 150°C.
- Typical gate charge of 44 nanocoulombs enables fast switching performance.
- Maximum gate-source voltage rating is ±25 volts.
Product Description
onsemi FDS6675BZ is a high-performance PowerTrench Type P-Channel MOSFET designed for efficient power switching applications. Rated at 11 A continuous drain current and 30 V maximum drain-source voltage, this device operates in enhancement mode for optimal control and performance. Packaged in a compact 8-pin SOIC form factor, it enables surface mount assembly suitable for dense electronic circuits.
This MOSFET exhibits a low maximum drain-source resistance of 13 mΩ, minimizing conduction losses and enhancing power efficiency. It supports a maximum power dissipation of 2.5 W, suitable for applications requiring thermal reliability within -55°C to 150°C operating temperature range. The typical gate charge of 44 nC ensures fast switching speeds, beneficial for synchronous rectification in AC/DC power supplies and related power electronics.
Featuring an advanced shielded-gate structure for charge balance, the FDS6675BZ improves the figure of merit compared to previous MOSFET generations. The integrated soft body diode eliminates the need for additional snubber circuits, offering quieter switching and reduced component count. Its compact physical size - 5 mm length, 4 mm width, and 1.5 mm height - makes it ideal for high-density electronic assemblies.
Common industrial applications include power management in consumer electronics, motor control, power supplies, and general purpose load switching in laboratory and manufacturing equipment.
Enhancement mode PowerTrench P-Channel MOSFET enhances system efficiency. Handles continuous current up to 11 A and voltage up to 30 V. Low gate charge allows rapid switching in power electronics. Soft body diode reduces electromagnetic interference and component count.
Compact SOIC package supports surface mount technology. Wide operating temperature range ensures reliability in harsh environments. Ideal for use in industrial, laboratory, construction, HVAC, manufacturing, and commercial applications.
Enhance your designs with onsemi’s reliable FDS6675BZ MOSFET. Explore comprehensive selections of MOSFETs and discrete semiconductors in the EnvMart catalog for all your semiconductor needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge is 44 nanocoulombs (nC).
This model measures 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation is 2.5 watts.
The operating temperature range is from -55°C to 150°C.
It comes in an 8-pin SOIC surface mount package.
The maximum gate-source voltage rating is ±25 volts.
The maximum drain-source resistance is 13 milliohms (mΩ).
It is suitable for power management in consumer electronics, motor control, power supplies, and general purpose load switching.
The channel mode is enhancement mode, which allows for efficient power switching.
The country of origin for this model is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
Recently Viewed Products
$0.60
$0.58
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent