onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 7 A, 30 V Enhancement Mode, 8-Pin SOIC FDS4935A

onsemi FDS4935A Isolated PowerTrench 2 Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching applications. It features a dual P-channel MOSFET construction optimized for low gate charge and low loss operation, essential for improving system efficiency and power density in electronic circuits.

This device operates with a maximum continuous drain current of 7 A and withstands a maximum drain-source voltage of 30 V. Packaged in a compact 8-pin SOIC surface-mount format measuring 5 mm in length, 4 mm in width, and 1.5 mm in height, it facilitates integration into space-constrained PCB layouts.

The PowerTrench technology of onsemi MOSFETs incorporates a shielded-gate structure that enhances charge balance and significantly lowers the figure of merit (FOM), resulting in superior switching performance compared to earlier generations. The soft reverse recovery body diode minimizes switching losses and can eliminate the need for snubber circuits or replacement by higher voltage rating MOSFETs.

Electrical characteristics include a maximum power dissipation rating of 2 W, typical gate charge of 15 nC at Vgs, and low drain-source resistance of 23 mΩ, which contribute to efficient power management and thermal performance. The device is capable of operating in harsh industrial environments with a temperature range from -55°C to 175°C.

Applications for the onsemi FDS4935A include industrial motor drives, power supply synchronous rectification, DC-DC converters, and other applications requiring efficient low-voltage power switching. The dual element per chip configuration offers design flexibility and reliability in commercial and industrial electronic systems.

Please note that this MOSFET does not have specific automotive certifications and is intended for general industrial and commercial electronic designs. PowerTrench technology enhances system efficiency and power density.

Type P channel with enhancement mode operation. Maximum continuous drain current of 7 A and maximum drain-source voltage of 30 V. Low gate charge and soft body diode for fast switching in synchronous rectification. Compact 8-pin SOIC surface-mount package with dimensions: length 5 mm, width 4 mm, height 1.5 mm.

Maximum power dissipation rating of 2 W and operating temperature range from -55°C to 175°C. Typical gate charge of 15 nC at Vgs and low drain-source resistance of 23 mΩ. Isolated transistor configuration with dual elements per chip.

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