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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS308PEH6327XTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
Infineon BSS308PEH6327XTSA1 is an OptiMOS P Type P-Channel MOSFET engineered for low-voltage, moderate-current switching and control in compact electronic assemblies. It features a maximum continuous drain current of 1.6 A and a maximum drain-source voltage of 30 V, making it suitable for a wide range of power management applications.
The device is housed in a small SOT-23 package designed for surface-mount PCB assembly and operates reliably within a temperature range of -55 °C to 150 °C, addressing demanding thermal conditions encountered in automotive and industrial environments. Its low on-resistance of 130 mΩ minimizes conduction losses, improving system efficiency.
This enhancement mode MOSFET has a typical gate charge of 5 nC, allowing fast switching with low drive power, and supports a maximum gate-source voltage of ±20 V for robust gate-drive design. The device can dissipate up to 500 mW of power under typical thermal conditions, assisting in effective thermal management.
Infineon BSS308PEH6327XTSA1 meets the rigorous AEC-Q101 automotive standard ensuring suitability for automotive electronic systems, battery protection circuits, load disconnect applications, power-path control, and DC-DC converter input stage switching. Its compact footprint is ideal for modern surface-mount power boards requiring reliable signal-level power switching.
Low on-resistance of 130 mΩ reduces conduction losses. Rated for 30 V drain-source withstand voltage for low-voltage systems. Continuous drain current of 1.6 A supports moderate load currents. Typical gate charge of 5 nC enables rapid switching speeds.
Maximum gate-source voltage of ±20 V provides strong drive margins. Power dissipation capacity of 500 mW improves thermal handling. Operating temperature range from -55 °C to 150 °C covers harsh environments. SOT-23 package type designed for surface-mount PCB usage.
Compliance with automotive AEC-Q101 qualification standard. Perfect for load disconnect, battery protection, power-path control, and DC-DC converter switching.
Explore the broad range of MOSFETs from Infineon on EnvMart, designed to meet demanding electronic component requirements across industrial, automotive, HVAC, and manufacturing industries.
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