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Infineon OptiMOS P Type P-Channel MOSFET 1.6 A 30 V Enhancement 3-Pin SOT-23 BSS308PEH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1mm
Length 2.9mm
Model BSS308PEH6327XTSA1
Width 1.3mm
Mount Type Surface
Series OptiMOS P
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.6A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 130mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.8V

Key Features

  • Low on-resistance of 130 mΩ for reduced conduction losses.
  • 30 V drain-source withstand voltage supports low-voltage systems.
  • Continuous drain current of 1.6 A supports moderate loads.
  • Typical gate charge of 5 nC allows fast switching.
  • Maximum gate-source voltage of ±20 V provides robust drive margins.
  • Power dissipation capacity of 500 mW aids thermal management.
  • Wide operating temperature range from -55 °C to 150 °C.
  • Compact SOT-23 surface mount package.

Product Description

Infineon BSS308PEH6327XTSA1 is an OptiMOS P Type P-Channel MOSFET engineered for low-voltage, moderate-current switching and control in compact electronic assemblies. It features a maximum continuous drain current of 1.6 A and a maximum drain-source voltage of 30 V, making it suitable for a wide range of power management applications.

The device is housed in a small SOT-23 package designed for surface-mount PCB assembly and operates reliably within a temperature range of -55 °C to 150 °C, addressing demanding thermal conditions encountered in automotive and industrial environments. Its low on-resistance of 130 mΩ minimizes conduction losses, improving system efficiency.

This enhancement mode MOSFET has a typical gate charge of 5 nC, allowing fast switching with low drive power, and supports a maximum gate-source voltage of ±20 V for robust gate-drive design. The device can dissipate up to 500 mW of power under typical thermal conditions, assisting in effective thermal management.

Infineon BSS308PEH6327XTSA1 meets the rigorous AEC-Q101 automotive standard ensuring suitability for automotive electronic systems, battery protection circuits, load disconnect applications, power-path control, and DC-DC converter input stage switching. Its compact footprint is ideal for modern surface-mount power boards requiring reliable signal-level power switching.

Low on-resistance of 130 mΩ reduces conduction losses. Rated for 30 V drain-source withstand voltage for low-voltage systems. Continuous drain current of 1.6 A supports moderate load currents. Typical gate charge of 5 nC enables rapid switching speeds.

Maximum gate-source voltage of ±20 V provides strong drive margins. Power dissipation capacity of 500 mW improves thermal handling. Operating temperature range from -55 °C to 150 °C covers harsh environments. SOT-23 package type designed for surface-mount PCB usage.

Compliance with automotive AEC-Q101 qualification standard. Perfect for load disconnect, battery protection, power-path control, and DC-DC converter switching.

Explore the broad range of MOSFETs from Infineon on EnvMart, designed to meet demanding electronic component requirements across industrial, automotive, HVAC, and manufacturing industries.

Infineon OptiMOS P Type P-Channel MOSFET 1.6 A 30 V Enhancement 3-Pin SOT-23 BSS308PEH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.6 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The typical gate charge for this model is 5 nC.

The dimensions of the SOT-23 package are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.

It operates within a temperature range of -55 °C to 150 °C.

The power dissipation capacity is 500 mW under typical thermal conditions.

This model complies with the AEC-Q101 automotive standard.

This MOSFET features a P-channel type.

The maximum gate-source voltage for this model is ±20 V.

This MOSFET is suitable for load disconnect, battery protection, power-path control, and DC-DC converter switching applications.

The low on-resistance of 130 mΩ minimizes conduction losses, thereby improving system efficiency.

The SOT-23 package has a pin count of 3.

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