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onsemi PowerTrench Type P-Channel MOSFET, 20 V, 1.6 A, Enhancement, SOT-23 Package FDN338P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN338P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 115mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 4.4nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features an enhancement mode channel with a maximum drain-source resistance of 115 milliohm.
- It supports a maximum power dissipation of 500 milliwatts and typical gate charge of 4.4 nanocoulombs.
- Operating temperature ranges from -55°C to 150°C ensuring robust performance under varying conditions.
- The compact SOT-23 surface mount package contains 3 pins and measures 2.92 mm in length and 1.4 mm in width.
- Its soft reverse recovery body diode and shielded-gate structure enable efficient switching and reduced system losses.
- Ideal for use in synchronous rectification applications in AC/DC power supplies and power management circuits.
Product Description
The onsemi FDN338P is a PowerTrench type P-Channel MOSFET designed for efficient power switching and optimized system performance.
With a maximum continuous drain current of 1.6 A and drain-source voltage of 20 V, it operates in enhancement mode, packaged in a compact 3-pin SOT-23 form suitable for surface mounting.
This device features a low maximum drain-source resistance of 115 mΩ, enabling reduced conduction losses.
The typical gate charge of 4.4 nC at Vgs, along with a soft reverse recovery body diode, contributes to fast switching and high efficiency in synchronous rectification in AC/DC power supplies.
The MOSFET is rated for power dissipation up to 500 mW and can operate reliably over a wide temperature range from -55°C to 150°C. Enhancement mode P-Channel MOSFET with 20 V Vds rating. Maximum continuous drain current of 1.6 A for medium power applications.
Compact 3-pin SOT-23 package designed for surface mount technology. Low gate charge and low Rds(on) support fast switching and efficient operation. Soft body diode characteristic reduces the need for snubber circuits. Temperature rating supports robust performance in industrial, consumer, and automotive electronics.
The FDN338P is widely used in power management circuits, load switching, synchronous rectification, and other high-efficiency power control applications in industrial, consumer electronics, and automotive sectors.
Explore more on Power MOSFETs in the discrete semiconductors category at EnvMart for varied industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.6 A.
It has a maximum drain-source voltage rating of 20 V.
This MOSFET is packaged in a SOT-23 type with dimensions of 2.92 mm in length and 1.4 mm in width.
The maximum power dissipation for this model is rated at 500 mW.
The typical gate charge at Vgs is 4.4 nC.
It operates reliably over a temperature range from -55°C to 150°C.
This model has a pin count of 3.
It features a Type P enhancement mode channel.
The maximum drain-source resistance is 115 mΩ.
The forward voltage for this model is -1.2 V.
This MOSFET uses a surface mount type.
It belongs to the PowerTrench series.
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