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onsemi PowerTrench Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount FDN304P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.92mm
Model FDN304P
Width 1.4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 2.4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 52mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 12nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • PowerTrench technology provides efficient switching with low gate charge and low forward voltage.
  • Maximum continuous drain current of 2.4 A ensures reliable power handling capacity.
  • Compact 3-pin SOT-23 package facilitates easy surface mounting on circuit boards.
  • Wide operating temperature range from -55°C to 150°C suits industrial environment conditions.
  • Shielded-gate structure reduces figure of merit, improving switching efficiency.
  • Soft body diode design eliminates need for snubber circuits.
  • Maximum power dissipation of 500 mW supports moderate power applications.

Product Description

onsemi FDN304P PowerTrench Type P-Channel MOSFET is a discrete semiconductor device designed for efficient power switching applications. Featuring a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 20 V, this enhancement mode MOSFET uses advanced PowerTrench technology to provide high efficiency and system power density.

The compact 3-pin SOT-23 surface mount package with dimensions measuring approximately 2.92 mm length, 1.4 mm width, and 940 μm height makes it ideal for densely packed electronic circuits in industrial controllers, power management modules, and consumer electronic devices.

The device offers a low typical gate charge of 12 nC and a forward diode voltage of -1.2 V. Its shielded-gate design results in a significantly reduced figure of merit, enabling fast switching and low energy loss in synchronous rectification. The soft reverse recovery body diode further improves efficiency by eliminating the need for external snubber circuits, thus simplifying circuit design.

The operating temperature range of -55°C to 150°C guarantees robust performance under harsh environmental conditions commonly found in automotive, industrial automation, HVAC, and manufacturing equipment.

PowerTrench technology enhances switching performance with low gate charge and forward voltage. Continuous drain current rating of 2.4 A supports moderate load currents. Maximum drain-source voltage of 20 V suited for low-voltage applications.

Compact 3-pin SOT-23 package for surface mounting in dense PCB layouts. Wide operating temperature range ensures reliability across industrial conditions. Shielded-gate structure reduces switching losses and improves efficiency.

Soft body diode allows elimination of snubber circuits for simpler designs. Maximum power dissipation rating of 500 mW supports efficient thermal management.

This MOSFET is ideal for use in industrial electronic components, power management systems, consumer electronics, and embedded systems. onsemi's reputation for semiconductor innovation ensures quality and performance for demanding applications.

Explore EnvMart’s extensive range of discrete semiconductors including MOSFETs for diverse industrial and electronic applications.

onsemi PowerTrench Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount FDN304P
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.4 A.

The maximum drain-source voltage is 20 V.

The typical gate charge is 12 nC.

The dimensions of the SOT-23 package are approximately 2.92 mm in length, 1.4 mm in width, and 940 μm in height.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation rating is 500 mW.

This model supports surface mounting.

The channel type is P-Channel.

The maximum gate-source voltage is -8 V to +8 V.

The forward voltage is -1.2 V.

The maximum drain-source resistance is 52 mΩ.

This MOSFET is suitable for industrial electronic components, power management systems, consumer electronics, and embedded systems.

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