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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN304P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
onsemi FDN304P PowerTrench Type P-Channel MOSFET is a discrete semiconductor device designed for efficient power switching applications. Featuring a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 20 V, this enhancement mode MOSFET uses advanced PowerTrench technology to provide high efficiency and system power density.
The compact 3-pin SOT-23 surface mount package with dimensions measuring approximately 2.92 mm length, 1.4 mm width, and 940 μm height makes it ideal for densely packed electronic circuits in industrial controllers, power management modules, and consumer electronic devices.
The device offers a low typical gate charge of 12 nC and a forward diode voltage of -1.2 V. Its shielded-gate design results in a significantly reduced figure of merit, enabling fast switching and low energy loss in synchronous rectification. The soft reverse recovery body diode further improves efficiency by eliminating the need for external snubber circuits, thus simplifying circuit design.
The operating temperature range of -55°C to 150°C guarantees robust performance under harsh environmental conditions commonly found in automotive, industrial automation, HVAC, and manufacturing equipment.
PowerTrench technology enhances switching performance with low gate charge and forward voltage. Continuous drain current rating of 2.4 A supports moderate load currents. Maximum drain-source voltage of 20 V suited for low-voltage applications.
Compact 3-pin SOT-23 package for surface mounting in dense PCB layouts. Wide operating temperature range ensures reliability across industrial conditions. Shielded-gate structure reduces switching losses and improves efficiency.
Soft body diode allows elimination of snubber circuits for simpler designs. Maximum power dissipation rating of 500 mW supports efficient thermal management.
This MOSFET is ideal for use in industrial electronic components, power management systems, consumer electronics, and embedded systems. onsemi's reputation for semiconductor innovation ensures quality and performance for demanding applications.
Explore EnvMart’s extensive range of discrete semiconductors including MOSFETs for diverse industrial and electronic applications.
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