onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

onsemi FDC6312P is an Isolated PowerTrench 2 Type P-Channel MOSFET designed for efficient power switching with a maximum continuous drain current of 2.3 A and a drain-source voltage of 20 V. This component features an enhancement mode channel configuration housed in a compact 6-Pin SOT-23 surface mount package, suited for high-density electronic assemblies.

PowerTrench MOSFETs incorporate a shielded-gate structure that balances charge to reduce figure of merit (FOM), resulting in lower switching losses. The isolated transistor configuration and soft body diode characteristics enable fast switching and eliminate the need for additional snubber circuits, making it ideal for synchronous rectification in AC/DC power supplies.

With a maximum power dissipation of 960 mW, and a temperature operating range from - 55°C to 150°C, this MOSFET supports demanding industrial and commercial environments. The device’s typical gate charge of 4.4 nC at Vgs enhances switching performance, while a robust maximum gate-source voltage of ±8 V protects against voltage spikes.

The device measures 3 mm in length, 1.7 mm in width, and 1 mm in height, providing a small footprint for compact designs. It includes two elements per chip and conforms to environmental standards ensuring compliance and safety.

Typical applications include power management, industrial electronics, telecommunications, and other systems requiring efficient, reliable MOSFET components. This MOSFET comes in a compact 6-Pin SOT-23 surface mount package suitable for space-constrained applications.

Maximum drain-source resistance of 115 milliohms ensures efficient conduction and reduced power loss. Designed with isolated transistor configuration and PowerTrench series technology for enhanced efficiency. Capable of dissipating up to 960 milliwatts of power, supporting robust thermal performance.

Wide operating temperature range from - 55°C to 150°C suitable for industrial and commercial uses. Typical gate charge of 4.4 nanocoulombs at gate-source voltage improves switching speed and efficiency. Maximum gate-source voltage rating is ±8 volts, ensuring device protection under voltage variations.

Forward voltage of - 0.7 V enhances synchronous rectification in power supplies. Small dimensions of 3 mm length, 1.7 mm width, and 1 mm height optimise board space. Contains 2 elements per chip and is RoHS compliant for environmental safety.

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