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onsemi PowerTrench N-Channel MOSFET, 12 A, 100 V Enhancement Mode, 3-Pin TO-263 Package FDB3632
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB3632 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Features a low maximum drain source resistance of 9mΩ for efficient switching.
- Supports maximum continuous drain current of 12 amperes.
- Maximum power dissipation of 310 watts enabling reliable high power performance.
- Operating temperature range from -55°C to 175°C for industrial and automotive applications.
- Typical gate charge of 84 nanocoulombs ensuring fast switching speeds.
- Maximum gate source voltage ratings of -20 V and +20 V for robust gate control.
- Compact dimensions with a height of 4.83 mm, length of 10.67 mm, and width of 9.65 mm.
- Ideal for power management and switching applications in electronic and automotive circuits.
Product Description
onsemi FDB3632 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching and management. This device operates at a maximum drain current of 12 amperes and withstands drain source voltages up to 100 volts, making it suitable for medium power electronic applications.
The transistor is housed in a 3-pin TO-263 surface mount package, providing easy PCB integration and thermal management. Its PowerTrench technology offers a low on-resistance of 9 milliohms, which helps minimize conduction losses and improve overall energy efficiency.
Key operating parameters include a power dissipation capacity of 310 watts and a wide operating temperature range from -55°C minimum to 175°C maximum, supporting robust operation in demanding environments such as automotive electronics and industrial control systems. The enhancement mode channel ensures stable switching behaviour with a typical gate charge of 84nC, facilitating rapid switching suitable for power converters and motor drivers.
Low drain source resistance aids in efficient power conduction. High current capability supports demanding load conditions. Wide temperature tolerance ensures reliability in harsh environments. Compact TO-263 package supports surface mount assembly and heat dissipation.
Enhanced switching speed due to low gate charge characteristics.
This MOSFET is ideal for use in industrial, automotive, consumer electronics, and power management applications where efficient switching and thermal robustness are critical. The product does not carry automotive-specific certification but maintains high reliability standards.
Choose this onsemi FDB3632 MOSFET for effective power regulation and switching in your next electronic design, benefiting from onsemi’s PowerTrench technology for superior performance and durability.
Explore more MOSFETs and semiconductor components from onsemi and other leading brands on EnvMart for optimized electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes.
It can withstand a maximum drain source voltage of 100 volts.
The maximum power dissipation capacity is 310 watts.
It features a low maximum drain source resistance of 9 milliohms.
The dimensions are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width.
The typical gate charge is 84 nanocoulombs.
It operates within a temperature range of -55°C to 175°C.
This model is housed in a 3-pin TO-263 surface mount package.
The maximum gate source voltage ratings are -20 V and +20 V.
It is suitable for power management and switching applications in electronic and automotive circuits.
This model utilizes an enhancement mode N-channel type.
It is designed for surface mounting, allowing for easy PCB integration.
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