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onsemi 30 V 3 A Schottky Diode 2-Pin DO-201AD 1N5821RLG
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 5.3mm |
| Length | 9.5mm |
| Model | 1N5821RLG |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | 1N5821 |
| Maximum Operating Temperature | 125°C |
| Package Type | DO-201AD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 3A |
| Peak Reverse Repetitive Voltage Vrrm | 30V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 2mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 0.95V |
| onsemi 30V 3A, Schottky Diode, 2-Pin DO-201AD 1N5821Brand | ON Semiconductor |
Key Features
- This diode uses Schottky barrier technology to provide low forward voltage drop and fast switching.
- Package type is DO-201AD with two pins for easy through-hole assembly.
- Maximum forward current is 3 amperes with a peak surge current of 80 amperes.
- Peak reverse voltage rating is 30 volts with peak reverse current of 2 mA.
- Operating temperature range extends from -65°C to 125°C for reliable industrial use.
- Physical dimensions include length of 9.5 mm and diameter of 5.3 mm.
- Designed for use in power rectifiers, low voltage, and high-frequency applications.
- Ideal for freewheeling, polarity protection, and other semiconductor diode uses.
Product Description
onsemi 1N5821RLG is a robust Schottky barrier diode with a voltage rating of 30 V and maximum continuous forward current of 3 A. It features a DO-201AD through-hole package with 2 pins, offering a compact physical size of 9.5 mm in length and 5.3 mm diameter. This diode is designed to provide efficient low forward voltage drop and minimal reverse current, making it well-suited for power rectification and protection circuits.
Operating reliably across a wide temperature range from -65°C to 125°C, this diode supports peak surge currents up to 80 A and peak reverse currents of 2 mA. The Schottky barrier technology enables high-frequency operation with fast switching capabilities, which is beneficial for industrial, laboratory, and manufacturing electronic applications.
Applications include low voltage rectifiers, freewheeling diodes in motor drives, polarity protection in power supplies, and other semiconductor circuits requiring high reliability at elevated temperatures. The epoxy molded case and lightweight construction enhance automated assembly and durability.
This diode uses Schottky barrier technology for low forward voltage drop and fast switching. Rated for 3 A forward current and 30 V peak reverse voltage. Through-hole mounting with 2-pin DO-201AD packaging. Wide operating temperature range from -65°C to 125°C.
Peak surge current capability of 80 A for transient conditions. Compact physical dimensions suitable for automated manufacturing. Reliable operation in industrial, construction, and laboratory electronics. Offers reverse current stability and polarity protection features.
Choose onsemi Schottky Diode 1N5821RLG for high-performance semiconductor applications requiring efficient power rectification and long-lasting durability within industrial electronics environments. Explore more in the Schottky Diodes category on EnvMart for comparable semiconductor diodes with various specifications.
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Frequently Asked Questions
The maximum continuous forward current for this diode is 3 A.
The peak reverse voltage rating of the 1N5821RLG is 30 V.
This diode has a length of 9.5 mm and a diameter of 5.3 mm.
The peak surge current capability is 80 A.
The operating temperature range for the 1N5821RLG extends from -65°C to 125°C.
It uses a DO-201AD package type with two pins for through-hole mounting.
The peak reverse current rating is 2 mA.
This diode is designed for use in power rectifiers, low voltage applications, and high-frequency applications, including freewheeling and polarity protection.
The maximum forward voltage drop is 0.95 V.
This diode has 2 pins.
The 1N5821RLG is a single diode configuration.
The country of origin for this diode is India.
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