onsemi NPN Power Transistor 16 A 160 V 125 W 3-Pin SOT-93 Through Hole MJE4343G

onsemi MJE4343G is a high-performance NPN power transistor designed for industrial and automotive control applications requiring robust power handling and reliable switching capabilities. It supports a maximum DC collector current of 16 amperes and can withstand a collector emitter voltage up to 160 volts, making it suitable for medium power applications.

Packaged in a 3-pin SOT-93 through hole mount package, this transistor is engineered for ease of circuit integration and superior heat dissipation. Its maximum power dissipation of 125 watts ensures efficient operation under demanding electrical loads.

The transistor configuration is single NPN type, providing a minimum DC current gain (hFE) of 8, which supports efficient amplification and switching performance. Operating temperature ranges from -65°C up to 150°C enable use in harsh environments, including automotive and industrial settings.

Key electrical parameters include a maximum collector base voltage of 160 volts and a maximum emitter base voltage of 7 volts, ensuring reliable operation within voltage limits. The maximum transition frequency of 1 MHz supports its application in power switching circuits requiring moderate switching speeds.

Dimension measurements are precise with length at 41.91 mm, width of 16.26 mm, and height of 5.3 mm, facilitating design compatibility in compact circuit layouts. The transistor meets automotive standard AEC-Q101, confirming its suitability for critical automotive applications requiring stringent quality and reliability standards.

This transistor supports a maximum power dissipation of 125 watts. It features a single transistor configuration with NPN polarity. The device operates in a temperature range from -65°C to 150°C. It has a minimum DC current gain (hFE) rating of 8.

Maximum transition frequency is 1 MHz suitable for power switching. Maximum collector base voltage rating is 160 volts. The transistor offers robustness with a maximum emitter base voltage of 7 volts. Physical dimensions include a length of 41.91 mm, width of 16.26 mm, and height of 5.3 mm.

Complies with automotive standard AEC-Q101 ensuring reliability in automotive applications.

This onsemi NPN power transistor is ideal for industrial, automotive, and general electronic component applications requiring dependable power switching and amplification with robust automotive compliance.

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