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onsemi NPN Power Transistor, 10 A, 60 V, Single Configuration, Through Hole Mount, TO-220 Package MJE3055TG

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onsemi NPN Power Transistor, 10 A, 60 V, Single Configuration, Through Hole Mount, TO-220 Package MJE3055TG

Name: onsemi NPN Power Transistor, 10 A, 60 V, Single Configuration, Through Hole Mount, TO-220 Package MJE3055TG
Brand: onsemi
SKU: 341460
Price: 0.7 USD
Availability: InStock

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Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	30.02mm
Length	10.53mm
Model	MJE3055TG
Width	4.83mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V
Minimum DC Current Gain hFE	5
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	70V
Maximum Power Dissipation Pd	75W
Maximum DC Collector Current Idc	10A
Transistor Configuration	Single
Maximum Transition Frequency ft	2MHz

Key Features

Supports maximum DC collector current of 10 amperes.
Collector-emitter voltage rating up to 60 volts.
Single transistor configuration with NPN polarity.
Mount type is through hole with TO-220 package design.
Maximum power dissipation of 75 watts ensures reliable performance.
Maximum collector-base voltage is rated at 70 volts for safe operation.
Operating temperature range from -55°C to 150°C for versatile environments.
Low minimum DC current gain of 5, suitable for power switching.

Product Description

onsemi MJE3055TG is an NPN power transistor engineered to handle high collector current of 10 A and collector-emitter voltage of 60 V, packaged in the standard TO-220 format with three pins for through-hole mounting. It is suitable for industrial and electronic applications including power switching, amplification, and general purpose use requiring robust performance.

This transistor offers a maximum power dissipation rating of 75 W, allowing sustained operation at elevated power levels. It supports a collector-base voltage of up to 70 V and emitter-base voltage up to 5 V, ensuring reliability in demanding circuits.

Operational temperature range from -55°C to 150°C enables use in diverse environments, including industrial and automotive settings, although it is not specifically automotive qualified. The minimum DC current gain (hFE) value of 5 guarantees functionality in power control applications.

With compact dimensions of 30.02 mm height, 4.83 mm width, and 10.53 mm length, the MJE3055TG transistor fits standard industry footprints and mounting protocols. Its single NPN transistor configuration is optimized for through-hole PCB installation.

Maximum DC collector current: 10 A. Maximum collector-emitter voltage: 60 V. Maximum power dissipation: 75 W. TO-220 package with through-hole mount. Single NPN transistor configuration. Operating temperature range: -55°C to 150°C.

This product is ideal for industrial electronics, power management, and discrete semiconductor applications where reliable, high current switching devices are needed. Browse EnvMart for more semiconductor and transistor solutions.

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