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Toshiba PNP Power Transistor, -15 A DC Collector Current, -230 V Collector Emitter Voltage, 3-Pin TO-3PL 2SA1943-O(Q)

Category Power Transistors Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 46mm
Length 20.5mm
Model 2SA1943-O(Q)
Width 5.2mm
Mount Type Through Hole
Series 2SA1943
Maximum Operating Temperature 150°C
Package Type TO-3PL
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -230V
Minimum DC Current Gain hFE 35
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -230V
Maximum Power Dissipation Pd 150W
Maximum DC Collector Current Idc -15A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz
Toshiba 2SA1943N(S1,E,S) Transistor, -15 A PNP, -230 V, 3-Pin TO-3PBrand Toshiba

Key Features

  • Maximum DC collector current of -15 amperes suitable for robust power control.
  • Collector emitter voltage of -230 volts ensures high voltage operation.
  • TO-3PL package type supports through-hole mounting for secure installation.
  • Power dissipation capacity of 150 watts for high power handling.
  • Maximum operating temperature up to 150°C for reliable performance.
  • Minimum DC current gain (hFE) of 35 ensures amplification efficiency.
  • Three-pin configuration enables easy integration into circuits.
  • Transition frequency of 30 MHz supporting medium frequency switching.

Product Description

Toshiba 2SA1943-O(Q) is a PNP power transistor engineered for industrial and electronic applications requiring high current and voltage capacity. Rated for a maximum DC collector current of -15 A and collector emitter voltage of -230 V, this transistor is optimized for high-power amplification and switching.

The device is housed in a TO-3PL package facilitating through-hole mount, providing structural rigidity and heat dissipation efficiency. It dissipates power up to 150 W, supporting demanding power management needs in industrial circuits.

Its operational temperature range from 0°C to 150°C guarantees stability in varied environments. The transistor exhibits a minimum DC current gain (hFE) of 35, making it suitable for efficient signal amplification.

Featuring a maximum transition frequency of 30 MHz, this component suits applications involving medium-frequency switching tasks. With 3-pin configuration and PNP polarity, it integrates seamlessly into established bipolar transistor architectures.

Dimensions measure 46 mm in height, 20.5 mm length, and 5.2 mm width, consistent with the TO-3PL form factor. This component is manufactured in Japan, ensuring quality and reliability in production.

Maximum DC collector current of -15 amperes suitable for robust power control. Collector emitter voltage of -230 volts ensures high voltage operation. TO-3PL package type supports through-hole mounting for secure installation.

Power dissipation capacity of 150 watts for high power handling. Maximum operating temperature up to 150°C for reliable performance. Minimum DC current gain (hFE) of 35 ensures amplification efficiency. Three-pin configuration enables easy integration into circuits.

Transition frequency of 30 MHz supporting medium frequency switching. Manufactured with PNP transistor polarity, appropriate for specific circuit designs.

This Toshiba 2SA1943-O(Q) transistor is ideal for industrial, electronic design, power amplification, and control circuit applications requiring reliable high current and voltage management.

Explore our selection of industrial semiconductors and Power Transistors in the Electronics & Electricals category at EnvMart for superior component solutions.

Toshiba PNP Power Transistor, -15 A DC Collector Current, -230 V Collector Emitter Voltage, 3-Pin TO-3PL 2SA1943-O(Q)
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Frequently Asked Questions

The maximum DC collector current for this model is -15 A, making it suitable for robust power control applications.

This transistor has a collector emitter voltage rating of -230 V, ensuring it can handle high voltage operations.

It is housed in a TO-3PL package type, which supports through-hole mounting for secure installation.

The power dissipation capacity of this transistor is 150 W, allowing it to manage high power requirements effectively.

The operational temperature range for this model is from 0°C to 150°C, ensuring stability in various environments.

The minimum DC current gain (hFE) for this transistor is 35, which ensures efficient signal amplification.

This transistor has a maximum transition frequency of 30 MHz, suitable for medium frequency switching applications.

The dimensions of this model are 46 mm in height, 20.5 mm in length, and 5.2 mm in width.

It features a single transistor configuration with a 3-pin setup, allowing for easy integration into circuits.

This transistor is manufactured in Japan, ensuring quality and reliability in production.

The maximum emitter base voltage (VEBO) for this model is -5 V, which is important for its operational limits.

The maximum collector base voltage (VCBO) for this transistor is -230 V, aligning with its high voltage capabilities.

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