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| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 46mm |
| Length | 20.5mm |
| Model | 2SA1943-O(Q) |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | 2SA1943 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PL |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -230V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -230V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | -15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
| Toshiba 2SA1943N(S1,E,S) Transistor, -15 A PNP, -230 V, 3-Pin TO-3PBrand | Toshiba |
Toshiba 2SA1943-O(Q) is a PNP power transistor engineered for industrial and electronic applications requiring high current and voltage capacity. Rated for a maximum DC collector current of -15 A and collector emitter voltage of -230 V, this transistor is optimized for high-power amplification and switching.
The device is housed in a TO-3PL package facilitating through-hole mount, providing structural rigidity and heat dissipation efficiency. It dissipates power up to 150 W, supporting demanding power management needs in industrial circuits.
Its operational temperature range from 0°C to 150°C guarantees stability in varied environments. The transistor exhibits a minimum DC current gain (hFE) of 35, making it suitable for efficient signal amplification.
Featuring a maximum transition frequency of 30 MHz, this component suits applications involving medium-frequency switching tasks. With 3-pin configuration and PNP polarity, it integrates seamlessly into established bipolar transistor architectures.
Dimensions measure 46 mm in height, 20.5 mm length, and 5.2 mm width, consistent with the TO-3PL form factor. This component is manufactured in Japan, ensuring quality and reliability in production.
Maximum DC collector current of -15 amperes suitable for robust power control. Collector emitter voltage of -230 volts ensures high voltage operation. TO-3PL package type supports through-hole mounting for secure installation.
Power dissipation capacity of 150 watts for high power handling. Maximum operating temperature up to 150°C for reliable performance. Minimum DC current gain (hFE) of 35 ensures amplification efficiency. Three-pin configuration enables easy integration into circuits.
Transition frequency of 30 MHz supporting medium frequency switching. Manufactured with PNP transistor polarity, appropriate for specific circuit designs.
This Toshiba 2SA1943-O(Q) transistor is ideal for industrial, electronic design, power amplification, and control circuit applications requiring reliable high current and voltage management.
Explore our selection of industrial semiconductors and Power Transistors in the Electronics & Electricals category at EnvMart for superior component solutions.
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