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onsemi Transistor, 10 A NPN Power, 60 V, 3-Pin TO-220 Package, Through Hole Mount, Model D44H8G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model D44H8G
Width 4.83mm
Mount Type Through Hole
Series D44H
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
STMicroelectronics Transistor, 20 A NPN, 60 V, 3-Pin TO-220Brand STMicroelectronics

Key Features

  • This NPN power transistor offers high reliability for power switching applications.
  • Maximum power dissipation is rated at 2 watts.
  • Minimum DC current gain (hFE) is 40 ensuring efficient amplification.
  • Designed to work within an operating temperature range from -55°C to 150°C.
  • High transition frequency of 50 MHz suitable for high-frequency operation.
  • Single transistor configuration with 3 pins for easy integration.
  • Pinout and package type consistent with common TO-220 standards for compatibility.
  • Emitter base voltage maximum of 5 V protects against breakdown.

Product Description

onsemi D44H8G is an NPN bipolar power transistor rated for a maximum DC collector current of 10 amperes and a collector-emitter voltage of 60 volts. Packaged in a standard 3-pin TO-220 through-hole mount case, this transistor offers dependable performance for power switching and amplification tasks in various electronic circuits.

The device features a maximum power dissipation of 2 watts with a minimum DC current gain (hFE) of 40, making it suitable for efficient signal amplification and power control. It operates reliably across a broad temperature range from -55°C to 150°C, accommodating demanding industrial and commercial environments.

Its transition frequency of 50 MHz supports high-frequency applications, while the 5 V maximum emitter-base voltage ensures safe operation within specified limits. The dimensions of 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width provide a compact form factor compatible with existing TO-220 sockets and heat sinks.

This transistor is widely used in power electronics, industrial automation, and electronic component manufacturing. It is ideal for applications requiring robust NPN power transistors with stable gain and reliable thermal performance.

This NPN power transistor offers high reliability for power switching applications. Maximum power dissipation is rated at 2 watts. Minimum DC current gain (hFE) is 40 ensuring efficient amplification. Designed to work within an operating temperature range from -55°C to 150°C.

Compact dimensions: 30.02mm height, 10.53mm length, and 4.83mm width. High transition frequency of 50 MHz suitable for high-frequency operation. Single transistor configuration with 3 pins for easy integration. Pinout and package type consistent with common TO-220 standards for compatibility.

Emitter base voltage maximum of 5 V protects against breakdown. Robust device suitable for industrial and electronic component applications. Explore more Power Transistors like onsemi D44H8G across the Electronics & Electricals category on EnvMart for diverse industrial and commercial solutions.

onsemi Transistor, 10 A NPN Power, 60 V, 3-Pin TO-220 Package, Through Hole Mount, Model D44H8G
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Frequently Asked Questions

The D44H8G transistor has a maximum DC collector current rating of 10 amperes.

The maximum collector-emitter voltage (Vceo) for the D44H8G is 60 volts.

This transistor is rated for a maximum power dissipation of 2 watts.

The D44H8G operates within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) for this model is 40, ensuring efficient amplification.

The transition frequency of this transistor is 50 MHz, suitable for high-frequency applications.

The dimensions of the D44H8G are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.

This model is packaged in a standard 3-pin TO-220 through-hole mount case.

The maximum emitter-base voltage (VEBO) for this transistor is 5 volts, which protects against breakdown.

The D44H8G is configured as a single transistor with 3 pins for easy integration.

This transistor is widely used in power electronics, industrial automation, and electronic component manufacturing.

The D44H8G is manufactured in India.

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