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onsemi NPN Bipolar Power Transistor 8A 150V TO-220 3-Pin Through Hole MJE15030G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE15030G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15030 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 150V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 150V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
| onsemi Transistor, 8 A NPN, 120 V, 3-Pin TO-220Brand | onsemi |
Key Features
- High DC current gain ensuring efficient amplification.
- TO-220 package with 3-pin through-hole mount for easy PCB integration.
- Maximum power dissipation up to 50W for robust thermal handling.
- Wide operating temperature range from -65°C to 150°C.
- Maximum transition frequency of 30MHz suitable for audio amplifier drivers.
- High voltage ratings with 150V collector-emitter and collector-base maximum voltages.
- NPN polarity suitable for high-frequency power applications.
- Compact dimensions with a height of 30.02mm and width of 4.83mm.
Product Description
onsemi MJE15030G is a high-performance NPN bipolar power transistor packaged in a TO-220 3-pin through-hole format. Rated for a maximum DC collector current of 8 amperes and a collector-emitter voltage of 150 volts, this transistor is ideal for demanding power applications, including audio amplifier high-frequency drivers.
The device features a high DC current gain, contributing to efficient and stable amplification in various circuits. With a maximum power dissipation of 50 watts, it ensures robust operation under thermal stress. The transistor is designed to operate reliably over a broad temperature range from -65°C to 150°C, making it suitable for industrial and automotive environments not requiring AEC-Q101 certification.
Its maximum transition frequency of 30 MHz supports high-frequency switching required in power regulation and amplification circuits. The standard single transistor configuration simplifies integration in discrete semiconductor applications. Dimensions of 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width provide a compact footprint fitting most power electronic designs.
High DC current gain ensures effective amplification. TO-220 3-pin through-hole package allows easy mounting and heat sinking. Maximum power dissipation rating of 50W supports heavy-duty operation. Wide temperature tolerance from -65°C to 150°C enhances reliability.
High voltage tolerances up to 150 V collector-emitter and collector-base. NPN transistor polarity suited for power amplification tasks. Compact dimensions contribute to space-efficient layouts. Single transistor configuration facilitates discrete circuit designs.
This transistor is widely used in industrial, audio amplification, power supply regulation, and general electronics manufacturing applications. It offers robust electrical performance and thermal stability expected from onsemi Power Transistors.
Explore EnvMart's catalog for a comprehensive range of semiconductor products including bipolar transistors designed for various application needs.
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Frequently Asked Questions
The maximum collector-emitter voltage for this model is 150V.
This transistor has a maximum DC collector current rating of 8A.
It can handle a maximum power dissipation of 50W.
The operating temperature range is from -65°C to 150°C.
This model is packaged in a TO-220 format with a 3-pin through-hole mount.
The maximum transition frequency is 30MHz, suitable for high-frequency applications.
The minimum DC current gain (hFE) is rated at 20.
The dimensions are 30.02mm in height, 10.53mm in length, and 4.83mm in width.
This model has an NPN transistor polarity, suitable for power amplification tasks.
It is commonly used in industrial applications, audio amplification, and power supply regulation.
The maximum emitter-base voltage (VEBO) is 5V.
The MJE15030G uses a single transistor configuration, facilitating discrete circuit designs.
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