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onsemi NPN Power Transistor 10 A 80 V 2W TO-220 Package Through Hole D44H11G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.82mm
Length 9.28mm
Model D44H11G
Width 10.29mm
Mount Type Through Hole
Series D44H
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
Magnatec D44H10 NPN Bipolar Transistor, 10 A, 80 V, 3-Pin TO-220ABBrand Magnatec

Key Features

  • Maximum DC collector current of 10 amperes for robust performance.
  • Collector emitter voltage rated at 80 volts to support various power levels.
  • TO-220 package form factor suitable for through-hole mounting.
  • Maximum power dissipation of 2 watts ensuring reliable operation.
  • Minimum DC current gain of 60 for efficient transistor action.
  • Operating temperature range from -55°C to 150°C for wide environmental tolerance.
  • Maximum transition frequency of 50 MHz enabling moderate frequency switching.
  • Compact dimensions of 9.28 mm length, 10.29 mm width, and 4.82 mm height.

Product Description

onsemi D44H11G is a robust NPN power transistor packaged in a TO-220 form, designed to deliver a maximum collector current of 10 amperes and withstand collector emitter voltages up to 80 volts. Its single transistor configuration, through-hole mount type, and 3-pin arrangement make it suitable for easy integration into power amplification and switching circuits in electronic applications.

This transistor supports a maximum power dissipation of 2 watts, ensuring stable operation under moderate thermal conditions. The minimum DC current gain (hFE) of 60 guarantees efficient transistor action, and the device operates reliably across a wide temperature spectrum from -55°C to 150°C, suitable for industrial and commercial electronics.

Its maximum transition frequency of 50 MHz allows use in frequency-sensitive applications, while its compact physical dimensions (9.28 mm length, 10.29 mm width, and 4.82 mm height) support efficient PCB layout designs.

Applications include power supply circuits, amplifiers, and electronic switching devices in industrial, commercial, and laboratory environments. The TO-220 package permits effective heat dissipation with external heat sinks, supporting high current loads.

Maximum DC collector current of 10 amperes for robust performance. Collector emitter voltage rated at 80 volts to support various power levels. TO-220 package enables effective heat management. Minimum DC current gain of 60 for efficient switching.

Wide operating temperature range from -55°C to 150°C. Transitions frequency up to 50 MHz for moderate frequency applications. Compact 3-pin configuration suitable for standard circuits. Maximum power dissipation of 2 watts for reliable operation.

Ideal for use in electronic component assemblies, power management, and semiconductor applications. Browse other Power Transistors and semiconductor devices on EnvMart for advanced electronic solutions.

onsemi NPN Power Transistor 10 A 80 V 2W TO-220 Package Through Hole D44H11G
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Frequently Asked Questions

The maximum DC collector current for this model is 10 amperes.

It is rated for a collector-emitter voltage of 80 volts.

This transistor is packaged in a TO-220 form factor suitable for through-hole mounting.

The maximum power dissipation is 2 watts, ensuring reliable operation under moderate thermal conditions.

The minimum DC current gain (hFE) is 60, which guarantees efficient transistor action.

It operates within a temperature range from -55°C to 150°C, making it suitable for various environments.

The maximum transition frequency is 50 MHz, allowing for moderate frequency applications.

The dimensions are 9.28 mm in length, 10.29 mm in width, and 4.82 mm in height.

It is an NPN power transistor designed for applications requiring power amplification and switching.

This model has a pin count of 3, suitable for standard circuit integration.

The maximum emitter-base voltage (VEBO) is 5 volts.

The D44H11G is manufactured in India.

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