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Vishay N-Channel MOSFET, 11 A, 600 V, Enhancement Mode, 3-Pin TO-247 Package IRFPC50PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFPC50PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFPC50 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 180W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
| IRFPC50, N-Channel MOSFET Transistor 11A 600V, 3-Pin TO-247ACBrand | Vishay |
Key Features
- This MOSFET operates in enhancement mode with a 3-pin TO-247 through-hole package.
- Maximum power dissipation is 180 watts, suitable for high-power applications.
- Gate-source voltage ranges from -20V to +20V, providing flexibility in gate control.
- Features a low maximum drain-source resistance of 600 milliohms for efficient conduction.
- Has a typical gate charge of 140 nanocoulombs at gate-source voltage.
- Designed to operate within a temperature range of -55°C to 150°C.
- Forward voltage drops typically 1.4 V, ensuring effective switching performance.
- Ideal for applications requiring reliable N-channel MOSFETs with high voltage and current ratings.
Product Description
Vishay IRFPC50PBF is a high-performance N-Channel Enhancement Mode MOSFET designed for high power switching applications. It features a maximum continuous drain current of 11 A and a maximum drain-source voltage of 600 V. The device comes in a robust 3-Pin TO-247 package with through-hole mount, enabling easy installation and heat dissipation.
This MOSFET's low on-state resistance of 600 milliohms enables efficient conduction with minimal power loss. The gate-source voltage range of -20 V to +20 V allows precise gate control for switching. Its maximum power dissipation rating of 180 W supports operation in demanding industrial environments.
The device exhibits a forward voltage of 1.4 V and a typical gate charge of 140 nC, which are optimized to provide fast switching and reduced gate drive power. It can reliably operate in a temperature range from -55°C up to 150°C, making it suitable for industrial, automotive, and commercial electronics.
The IRFPC50PBF MOSFET is widely used in power supplies, inverters, motor controls, and other applications that require efficient, high-voltage, high-current switching components. Its consistent performance and trusted Vishay brand quality make it an excellent choice for electronics designers and system integrators.
This MOSFET operates in enhancement mode with a 3-pin TO-247 package. Product supports a maximum continuous drain current of 11 A. Maximum drain-source voltage rating is 600 V. Maximum power dissipation is 180 W for robust thermal handling.
Operating temperature ranges from -55°C to 150°C. Typical gate charge is 140 nC, supporting fast switching speeds. Low on-resistance of 600 mΩ reduces conduction losses. Forward voltage is typically 1.4 V ensuring efficient operation.
Explore the Vishay range of discrete semiconductors to find complementary MOSFETs and power components suitable for various industrial and commercial applications. Ideal for electronics manufacturing, repair, and design projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11 A.
It has a maximum drain-source voltage rating of 600 V.
This MOSFET supports a maximum power dissipation of 180 W.
The operating temperature range is from -55°C to 150°C.
It comes in a 3-pin TO-247 package suitable for through-hole mounting.
The typical gate charge is 140 nanocoulombs (nC) at gate-source voltage.
The maximum gate-source voltage range is from -20 V to +20 V.
The forward voltage drop is typically 1.4 V.
It has a low maximum drain-source resistance of 600 milliohms (mΩ).
The height is 20.7 mm and the width is 5.31 mm.
The country of origin for this MOSFET is India.
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