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Vishay N-Channel MOSFET 5.9 A 200 V Enhancement Mode 3-Pin TO-220 IRFI630GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | IRFI630GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-channel MOSFET,IRFI630G 5.9A 200VBrand | Vishay |
Key Features
- Operates with maximum continuous drain current of 5.9 A.
- Supports a maximum drain-source voltage of 200 V.
- Enhancement mode MOSFET with low gate charge for efficient switching.
- Thermally rated for maximum power dissipation of 35 W.
- Compact TO-220 3-pin through-hole package for easy PCB integration.
- Wide operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage of ±20 V ensures robust gate drive tolerance.
- Low maximum drain-source resistance of 400 mΩ for minimal conduction losses.
Product Description
Vishay IRFI630GPBF is a high-performance N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. This component operates with a maximum continuous drain current of 5.9 A and can withstand drain-source voltages up to 200 V, suitable for power management and motor control applications.
Housed in a TO-220 3-pin through-hole package, the MOSFET facilitates easy mounting on printed circuit boards and efficient heat dissipation. Its enhancement mode characteristics combined with a low gate charge (43 nC at Vgs) allow for rapid switching with reduced gate drive power requirements.
The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics environments. Its maximum power dissipation is rated at 35 W, allowing it to handle significant load currents while maintaining thermal stability.
The gate-source voltage range of ±20 V enhances the robustness of gate drive circuits, preventing damage from voltage spikes. Additionally, the low Rds(on) value of 400 mΩ helps to minimize conduction losses during operation, contributing to overall system efficiency.
Key technical dimensions include a height of 9.8 mm, length of 10.63 mm, and width of 4.83 mm, optimizing its footprint for design flexibility. Operates at 5.9 A maximum continuous drain current. Drain-source voltage of 200 V for robust power handling.
Enhancement mode channel for efficient switching. TO-220 3-pin through-hole package facilitates mounting. Wide operating temperature range suitable for harsh environments. Low gate charge enables fast switching and low drive loss.
Maximum power dissipation of 35 W for thermal reliability. Low drain-source resistance reduces conduction losses.
This Vishay IRFI630GPBF MOSFET is ideal for industrial automation, power electronics, motor drives, and general electronic circuit design. Its reliable specifications comply with demanding operational standards and offer excellent performance in various semiconductor applications.
Explore the comprehensive range of MOSFETs and discrete semiconductors in the Electronics & Electricals category at EnvMart for optimal component selection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.9 A.
It can withstand a maximum drain-source voltage of 200 V.
The maximum power dissipation for this MOSFET is rated at 35 W.
The maximum gate-source voltage is ±20 V, providing robust gate drive tolerance.
This MOSFET is housed in a TO-220 package and features a through-hole mounting style.
It operates within a wide temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 43 nC.
The maximum drain-source resistance (Rds(on)) is 400 mΩ, which helps minimize conduction losses.
This model has 3 pins.
It utilizes an N-channel configuration, which is suitable for efficient switching.
This MOSFET is suitable for applications in power management, motor control, and general electronic circuit design.
The dimensions are height: 9.8 mm, length: 10.63 mm, and width: 4.83 mm.
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