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Vishay N-Channel MOSFET 10 A 60 V Enhancement 3-Pin TO-220 IRFZ14PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRFZ14PBF
Width 4.7mm
Mount Type Through Hole
Series IRFZ
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 43W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.6V
N-Channel MOSFET Transistor, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14Brand Vishay

Key Features

  • Capable of handling a maximum continuous drain current of 10 A.
  • Supports a maximum drain-source voltage of 60 V.
  • Features a low drain-source resistance of 200 milliohms for efficient switching.
  • Designed for high power dissipation up to 43 W with robust operation up to 175°C.
  • Equipped with a typical gate charge of 11 nanocoulombs enabling fast switching.
  • Wide operating temperature range from -55°C to 175°C ensuring reliability in harsh environments.
  • Compact dimensions with 4.7 mm width, 10.41 mm length, and 9.01 mm height.
  • Forward voltage drop of 1.6 V to minimize power loss during conduction.

Product Description

The Vishay IRFZ14PBF N-Channel Enhancement Mode MOSFET is engineered for high efficiency and reliable operation in power electronics projects requiring low on-resistance and high current capability. With a maximum continuous drain current of 10 A and a drain-source voltage rating of 60 V, this MOSFET is suitable for switching and amplification in a variety of industrial and commercial applications.

This device features a TO-220 package, facilitating easy through-hole mounting on printed circuit boards. Its robust design supports power dissipation up to 43 W and operates reliably in temperature ranges from -55°C to 175°C. The typical gate charge of 11 nC helps achieve swift switching speeds, important in power conversion and motor control circuits.

Physical dimensions of 4.7 mm width, 10.41 mm length, and 9.01 mm height allow for compact integration. The device offers a low maximum drain-source resistance of 200 milliohms, reducing conduction losses and improving overall efficiency.

Applications include industrial power supplies, automotive electronics, DC-DC converters, motor drives, and general-purpose switching. The enhancement mode channel ensures the MOSFET is off at zero gate bias, increasing safety and control in electronic designs. This MOSFET is compliant with industry standards but does not carry specific automotive certifications.

Capable of handling a maximum continuous drain current of 10 A. Supports a maximum drain-source voltage of 60 V. Features a low drain-source resistance of 200 milliohms for efficient switching. Designed for high power dissipation up to 43 W with robust operation up to 175°C.

Equipped with a typical gate charge of 11 nanocoulombs enabling fast switching. Wide operating temperature range from -55°C to 175°C ensuring reliability in harsh environments. Compact dimensions with 4.7 mm width, 10.41 mm length, and 9.01 mm height.

Forward voltage drop of 1.6 V to minimize power loss during conduction. Standard TO-220 three-pin package suitable for various power electronics applications.

Choose Vishay MOSFETs for reliable, high-performance electronics components. Browse the Electronics & Electricals category at EnvMart for more semiconductor solutions suitable for industrial, laboratory, automotive, and power management applications.

Vishay N-Channel MOSFET 10 A 60 V Enhancement 3-Pin TO-220 IRFZ14PBF
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Frequently Asked Questions

The maximum continuous drain current of this model is 10 A.

It supports a maximum drain-source voltage of 60 V.

The typical gate charge is 11 nanocoulombs (nC).

It is designed for high power dissipation up to 43 W.

The dimensions are 4.7 mm in width, 10.41 mm in length, and 9.01 mm in height.

The maximum operating temperature is 175°C.

It uses a through-hole mounting type, suitable for printed circuit boards.

The forward voltage drop is 1.6 V.

The minimum operating temperature is -55°C.

The maximum drain-source resistance is 200 milliohms (mΩ).

This MOSFET is suitable for applications such as industrial power supplies, automotive electronics, DC-DC converters, and motor drives.

The channel mode is enhancement, meaning it is off at zero gate bias.

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