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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFZ14PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| N-Channel MOSFET Transistor, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14Brand | Vishay |
The Vishay IRFZ14PBF N-Channel Enhancement Mode MOSFET is engineered for high efficiency and reliable operation in power electronics projects requiring low on-resistance and high current capability. With a maximum continuous drain current of 10 A and a drain-source voltage rating of 60 V, this MOSFET is suitable for switching and amplification in a variety of industrial and commercial applications.
This device features a TO-220 package, facilitating easy through-hole mounting on printed circuit boards. Its robust design supports power dissipation up to 43 W and operates reliably in temperature ranges from -55°C to 175°C. The typical gate charge of 11 nC helps achieve swift switching speeds, important in power conversion and motor control circuits.
Physical dimensions of 4.7 mm width, 10.41 mm length, and 9.01 mm height allow for compact integration. The device offers a low maximum drain-source resistance of 200 milliohms, reducing conduction losses and improving overall efficiency.
Applications include industrial power supplies, automotive electronics, DC-DC converters, motor drives, and general-purpose switching. The enhancement mode channel ensures the MOSFET is off at zero gate bias, increasing safety and control in electronic designs. This MOSFET is compliant with industry standards but does not carry specific automotive certifications.
Capable of handling a maximum continuous drain current of 10 A. Supports a maximum drain-source voltage of 60 V. Features a low drain-source resistance of 200 milliohms for efficient switching. Designed for high power dissipation up to 43 W with robust operation up to 175°C.
Equipped with a typical gate charge of 11 nanocoulombs enabling fast switching. Wide operating temperature range from -55°C to 175°C ensuring reliability in harsh environments. Compact dimensions with 4.7 mm width, 10.41 mm length, and 9.01 mm height.
Forward voltage drop of 1.6 V to minimize power loss during conduction. Standard TO-220 three-pin package suitable for various power electronics applications.
Choose Vishay MOSFETs for reliable, high-performance electronics components. Browse the Electronics & Electricals category at EnvMart for more semiconductor solutions suitable for industrial, laboratory, automotive, and power management applications.
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