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Vishay P-Channel Enhancement MOSFET, 21 A, 100 V, 3-Pin TO-247 Package IRFP9140PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP9140PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 180W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5V |
| P-channel MOSFET,IRFP9140 21A 100V 25pcsBrand | Vishay |
| P-Channel MOSFET Transistor, 21 A, 100 V, 3-Pin TO-247AC Vishay IRFP9140Brand | Vishay |
Key Features
- Type P channel MOSFET designed for enhancement mode operation.
- Maximum continuous drain current of 21 amperes for robust power handling.
- Rated for a maximum drain-source voltage of 100 volts ensuring reliable switching.
- Low drain-source resistance of 200 milliohms reduces conduction losses.
- Maximum power dissipation up to 180 watts for high thermal performance.
- Typical gate charge of 61 nanocoulombs allowing fast switching capabilities.
- Gate-source voltage rating of -20 to +20 volts for flexible control voltages.
- Forward voltage drop of approximately -5 volts optimizing conduction efficiency.
Product Description
The Vishay IRFP9140PBF is a high-performance P-Channel Enhancement MOSFET designed for power electronics applications requiring fast switching, rugged operation, and efficient thermal management. It features a maximum continuous drain current of 21 A and a maximum drain-source voltage rating of 100 V, making it suitable for various industrial and electronic systems.
Encapsulated in a through-hole compatible 3-pin TO-247 package, it provides easy mounting and reliable electrical connections. The device's low drain-source resistance (200 mΩ) minimizes conduction losses during operation, improving efficiency in power conversion circuits.
This MOSFET supports a maximum power dissipation of 180 W and typical gate charge of 61 nC, facilitating rapid switching and high throughput. Its gate-source voltage tolerance of -20 V to +20 V allows robust gate drive control. The forward voltage of approximately -5 V aids in effective conduction performance.
The device is rated for operation between -55°C and 175°C, making it suitable for demanding industrial environments, automotive electronics, and power management systems. Its physical dimensions include a length of 15.87 mm, a width of 5.31 mm, and a height of 20.7 mm, optimized for standard PCB layouts.
Vishay's third-generation power MOSFETs, including the IRFP9140PBF, combine ruggedized design with cost-effectiveness and suitability for fast switching, repetitive avalanche conditions, and ease of paralleling in power circuit designs.
Type P channel, enhancement mode MOSFET for power applications. 21 A continuous drain current with 100 V maximum voltage rating. Low 200 mΩ Rds(on) improving efficiency in power electronics. 180 W maximum power dissipation ensures robust thermal handling.
61 nC gate charge for quick switching and control. Wide gate-source voltage range of -20 to +20 V. Operating temperature range: -55°C to +175°C for reliability. TO-247 3-pin package for through-hole mounting. Ideal for industrial, automotive, and power management uses.
Compact physical size optimized for PCB integration. Explore Vishay MOSFETs and other discrete semiconductor products on EnvMart for reliable and efficient power electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A.
It has a maximum drain-source voltage rating of 100 V.
This MOSFET is encapsulated in a TO-247 package, which is suitable for through-hole mounting.
The typical gate charge for this model is 61 nanocoulombs (nC).
It supports a maximum power dissipation of 180 watts.
The dimensions are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
The operating temperature range is from -55°C to 175°C.
The drain-source resistance is 200 milliohms (mΩ).
It has a gate-source voltage rating of -20 to +20 volts.
This model features a P-channel type channel.
It is suitable for power electronics applications, including industrial and automotive systems.
The forward voltage drop is approximately -5 volts.
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