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Vishay Type P-Channel MOSFET, -19.3 A Drain Current, 30 V Drain Source Voltage, 8-Pin SO-8 Package SI4153DY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SI4153DY-T1-GE3 |
| Mount Type | Surface |
| Series | Si4153DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -19.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Maximum Power Dissipation Pd | 5.6W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | 25V |
Key Features
- Designed for surface mount applications with an SO-8 package.
- Maximum drain-source resistance of 95 milliohms ensures efficient conduction.
- Typical gate charge of 31 nanocoulombs optimizes switching performance.
- Maximum power dissipation capacity of 5.6 watts for reliable operation.
- Wide operating temperature range from -55°C to 150°C suits various conditions.
- Maximum gate-source voltage rating of 25 V to protect the device.
- RoHS compliant ensuring environmental standards compliance.
- Suitable for adaptor switch, power management, and load switch applications.
Product Description
Vishay SI4153DY-T1-GE3 is a Type P-Channel MOSFET designed to handle a maximum continuous drain current of -19.3 A and a maximum drain-source voltage of 30 V. Housed in an 8-pin SO-8 surface mount package, this device provides low drain-source resistance and an optimal gate charge for fast switching performance.
The MOSFET offers a maximum power dissipation of 5.6 W and operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding electronic applications.
With a maximum gate-source voltage rating of 25 V and RoHS compliance, the SI4153DY-T1-GE3 supports environmentally friendly manufacturing practices and stable operation in power management systems.
This MOSFET is ideal for use in adapter switching circuits, load switching, and various power management solutions in industrial, electronic, and consumer equipment. Surface mount SO-8 package type for compact PCB design.
Maximum continuous drain current of -19.3 A for high current applications. Drain-source voltage rating of 30 V ensures robustness. Low on-resistance of 95 milliohms reduces power losses. Operates over a temperature range of -55°C to 150°C for versatile use.
Optimized gate charge of 31 nC enhancing switching efficiency. Maximum power dissipation of 5.6 W supports demanding loads. RoHS compliant to meet regulatory environmental standards.
This Vishay MOSFET is an essential component for electronic designers requiring reliable, efficient power switching components. Explore more high-quality discrete semiconductor devices at EnvMart to fulfill your design requirements.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SI4153DY-T1-GE3 is -19.3 A.
This model has a maximum drain-source voltage rating of 30 V.
The Vishay SI4153DY-T1-GE3 is housed in an 8-pin SO-8 surface mount package.
The maximum power dissipation capacity of this unit is 5.6 W.
The typical gate charge for the SI4153DY-T1-GE3 is 31 nanocoulombs.
It operates reliably over a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating for this device is 25 V.
The maximum drain-source resistance of this model is 95 milliohms.
Yes, the Vishay SI4153DY-T1-GE3 is RoHS compliant, ensuring it meets environmental standards.
This unit is suitable for adapter switching circuits, load switching, and various power management solutions.
The SI4153DY-T1-GE3 has a pin count of 8.
The country of origin for this model is India.
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