onsemi N-Channel IGBT, 80 A, 650 V, 3-Pin TO-263 Surface Mount AFGB40T65SQDN

onsemi AFGB40T65SQDN is a 3-pin N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in the TO-263 package. It is rated for a maximum continuous collector current of 80 A and a collector emitter voltage of 650 V, ensuring suitability for medium to high power electronic switching applications.

This device incorporates the novel 4th generation field stop IGBT technology, enhancing performance by minimizing conduction and switching losses, which translates into higher efficiency and reliability. Its low saturation voltage of typically 1.6 V at 40 A collector current reduces power dissipation during operation.

The AFGB40T65SQDN features a robust maximum power dissipation of 238 W, allowing it to operate effectively in demanding thermal conditions. The device is qualified to the automotive industry standard AEC-Q101, making it ideal for automotive onboard chargers and DC/DC converters used in hybrid and electric vehicles.

Designed with a wide operating temperature range from -55°C to 175°C, it is suitable for harsh industrial and automotive environments. The device tolerates a maximum gate emitter voltage of ±20 V, ensuring reliable switching control. Additionally, the integrated low VF soft recovery diode reduces emission noise during switching operations.

Its compact TO-263 surface mount package with dimensions of 10.67 mm width, 9.65 mm length, and 4.06 mm height supports efficient space utilization on circuit boards. The AFGB40T65SQDN is used extensively in applications requiring efficient power management such as automotive on-board charging systems, HEV DC/DC converters, and electric vehicle powertrains.

Utilizes 4th generation field stop IGBT technology for optimized performance. Delivers low conduction loss and switching loss for high efficiency. Maximum power dissipation of 238 W allows robust thermal handling. Designed for automotive applications with AEC-Q101 qualification.

Wide operating temperature range from -55°C to 175°C supports harsh environments. Low typical saturation voltage of 1.6 V at 40 A collector current enhances energy efficiency. ±20 V maximum gate emitter voltage tolerance for reliable control.

Co-packaged low VF soft recovery diode reduces switching noise. Compact TO-263 surface mount package for dense PCB layouts. This product offers a reliable solution for various industrial, automotive, and power conversion applications, meeting stringent quality standards and robust performance criteria.

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