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Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ018NE2LSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ018NE2LSIATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for high performance Buck converter applications.
- Features monolithic integrated Schottky-like diode for efficient switching.
- Surface mount package type PQFN ensures compact mounting.
- Maximum drain source resistance of 0.7 milliohm for low conduction loss.
- Operates reliably from -55°C to a maximum temperature of 175°C.
- Typical gate charge of 80 nC at specified gate voltage for fast switching.
- Maximum power dissipation rating of 81 W supports demanding power requirements.
- Forward voltage of 1 V helps maintain efficiency in circuits.
Product Description
Infineon BSZ018NE2LSIATMA1 is a high-performance N-channel Power MOSFET designed for advanced power electronics applications such as Buck converters. It supports a maximum continuous drain current of 212 A and withstands up to 40 V drain-source voltage, making it suitable for demanding industrial, automotive, and power management scenarios.
This MOSFET comes in a compact 8-pin PQFN surface mount package, allowing for efficient PCB layout and heat dissipation. It integrates a monolithic Schottky-like diode within the device for optimized switching performance and enhanced reliability.
The device exhibits a low maximum drain-source resistance of 0.7 milliohm, minimizing conduction losses and improving efficiency under high current operations. It features a typical gate charge of 80 nC at the rated gate voltage, delivering swift switching speed crucial for high-frequency power circuits.
The MOSFET reliably operates across a wide temperature range from -55°C up to 175°C, accommodating harsh environmental conditions in industrial and automotive contexts. Its maximum power dissipation capability of 81 W ensures robust performance in continuous high-load scenarios.
Additional technical specifications include a forward voltage of 1 V and a maximum gate source voltage tolerance of 20 V. Certified to RoHS standards, this product aligns with environmental safety and compliance requirements.
Common applications for the Infineon BSZ018NE2LSIATMA1 include industrial power supplies, automotive power controls, and efficient DC/DC Buck converters used in various manufacturing and electronics systems. The compact PQFN package facilitates easy integration into modern electronic assemblies.
Optimized for high performance Buck converter applications. Features monolithic integrated Schottky-like diode for efficient switching. Surface mount package type PQFN ensures compact mounting. Maximum drain source resistance of 0.7 milliohm for low conduction loss.
Operates reliably from -55°C to a maximum temperature of 175°C. Typical gate charge of 80 nC at specified gate voltage for fast switching. Maximum power dissipation rating of 81 W supports demanding power requirements. Forward voltage of 1 V helps maintain efficiency in circuits.
Complies with RoHS standards ensuring environmental safety. Designed with 20 V maximum gate source voltage tolerance. Explore more Infineon MOSFETs and power management components in EnvMart for your industrial and electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 212 A.
It can withstand a maximum drain-source voltage of 40 V.
The maximum power dissipation rating is 81 W.
The typical gate charge is 80 nC at the specified gate voltage.
The maximum drain-source resistance is 0.7 milliohm.
It operates reliably from -55°C to a maximum temperature of 175°C.
This model comes in a compact 8-pin PQFN surface mount package.
The forward voltage is 1 V, which helps maintain efficiency in circuits.
The maximum gate-source voltage tolerance is 20 V.
Yes, it complies with RoHS standards for environmental safety.
This model features an N-channel configuration.
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