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Infineon High Performance N-Channel MOSFET 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC032NE2LSATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC032NE2LSATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Optimized for high-performance buck converter applications.
  • Extremely low on-resistance for superior efficiency.
  • Superior thermal resistance enhances reliability under load.
  • Typical gate charge is 80 nC at a gate-source voltage of 8 V.
  • Maximum power dissipation rated at 81 W ensuring robust operation.
  • Operating temperature range from -55°C to 175°C for demanding environments.
  • Forward voltage drop is nominally 1 V for efficient conduction.
  • RoHS compliant with Pb-free lead plating and halogen-free construction.

Product Description

Infineon BSC032NE2LSATMA1 is a high-performance N-Channel MOSFET designed for industrial and commercial electronic applications requiring efficient power switching. It supports a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V. This device is housed in an 8-pin SuperSO8 package measuring 5 x 6 mm, optimized for surface mount technology.

Featuring superior thermal resistance and very low on-resistance (0.7 mΩ max), this MOSFET enhances efficiency and reliability in power conversion and switching circuits, especially in buck converter designs. Its typical gate charge (Qg) is 80 nC at gate-source voltage (Vgs) of 8 V, allowing fast switching with minimized losses.

The device operates over a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial environments. It has a maximum power dissipation capability of 81 W, ensuring robust thermal handling. The forward voltage drop measures approximately 1 V, contributing to effective conduction efficiency.

Compliant with RoHS directives, the BSC032NE2LSATMA1 features Pb-free lead plating and halogen-free materials as per IEC61249-2-22 standards, supporting environmentally responsible manufacturing and operation.

Optimized for high-performance buck converters requiring high current handling. Extremely low on-resistance reduces power loss and heat generation. Superior thermal resistance enhances device longevity and stability. Wide operating temperature range supports challenging industrial environments.

Pb-free and halogen-free in compliance with RoHS regulations. Compact SuperSO8 5 x 6 mm package facilitates dense PCB designs. Surface mount design suited for modern automated assembly processes. Typical gate charge enables efficient switching performance.

Forward voltage drop ensures minimal conduction losses. Maximum power dissipation supports durable operation in demanding applications.

This MOSFET is ideal for electrical, industrial, and semiconductor applications including power management and conversion in consumer electronics, automotive electronics, and manufacturing equipment. Its design ensures high efficiency and robustness in various electrical switching and amplification tasks.

Explore more power semiconductor components and related devices in the Infineon range on EnvMart for your industrial and electronic system needs.

Infineon High Performance N-Channel MOSFET 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC032NE2LSATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 A.

It can handle a maximum drain-source voltage of 40 V.

The typical gate charge is 80 nC at a gate-source voltage of 8 V.

The maximum power dissipation is rated at 81 W.

It operates within a temperature range from -55°C to 175°C.

The maximum drain-source resistance is 0.7 mΩ.

It features a surface mount design.

Yes, it is RoHS compliant with Pb-free lead plating and halogen-free construction.

The forward voltage drop is nominally 1 V.

The maximum gate-source voltage is 20 V.

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