Infineon N-Channel MOSFET 381 A, 40 V, 8-Pin SuperSO8 Surface Mount BSC0906NSATMA1

Infineon BSC0906NSATMA1 is a high-performance N-channel MOSFET tailored for switching and controlling high current loads in power electronic circuits. It supports a continuous drain current of 381 A and a drain-source voltage of 40 V. The device is housed in a compact 8-pin SuperSO8 surface-mount package sized 5 x 6 mm, facilitating efficient PCB integration and thermal management.

This MOSFET features a low on-resistance of 0.7 milliohm which minimizes conduction losses, making it suitable for medium-voltage power systems. It can dissipate up to 81 W of power, allowing it to sustain high thermal loads typical of industrial and commercial power switching environments.

The device operates over a broad temperature range from −55 °C to +150 °C, making it reliable for diverse environments including automotive, server power distribution, motor drive output stages, and DC-DC converter modules. The typical gate charge of 80 nC provides predictable switching control with a maximum gate-source voltage rating of 20 V to prevent damage to the gate oxide layer.

The forward voltage of 1 V is an important parameter when evaluating voltage drop in rectification or low-side conduction applications. The compact SuperSO8 package configuration ensures a short conduction path to PCB thermal planes enhancing heat dissipation performance.

Common industrial applications include high-current DC-DC converter stages, synchronous rectification in power modules, motor drive output stages requiring large current switching, server power distribution systems, and compact surface mount power assemblies.

Maximum continuous drain current of 381 A supports high current power circuits. 40 V drain-source voltage rating accommodates medium-voltage applications. Low on-resistance Rds(on) of 0.7 mΩ reduces conduction losses efficiently.

Compact 8-pin SuperSO8 surface mount package (5 x 6 mm) for easy PCB integration. Wide operating temperature range from −55 °C to +150 °C for reliability. Typical gate charge of 80 nC facilitates effective and predictable switching.

Forward voltage of 1 V for conduction evaluation in rectification circuits. Explore more power MOSFETs and semiconductor components under the Infineon brand at EnvMart for your industrial, automotive, server power, and electronic design projects.