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onsemi Insulated Gate Bipolar Transistor (IGBT) 650 V, 375 W Power Dissipation, 3-Pin TO-247-3L Surface Mount FGHL75T65MQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65MQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65MQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 375W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector emitter voltage rating of 650 V ensures high voltage tolerance.
- Maximum power dissipation of 375 W supports substantial power handling.
- Package type is TO-247-3L designed for surface mounting.
- Wide operating temperature range from -55°C to 175°C allows reliable operation under harsh conditions.
- Maximum gate-emitter voltage rating of 20 V protects gate integrity.
- Compact dimensions with length 15.87 mm, width 20.82 mm, and height 4.82 mm.
- Low switching and conduction losses optimize efficiency in power circuits.
- Designed with positive temperature coefficient for better paralleling operation.
Product Description
onsemi FGHL75T65MQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronic applications. It features a maximum collector-emitter voltage of 650 V and a maximum power dissipation of 375 W, packaged in a TO-247-3L 3-pin surface mount format. This device is engineered to balance conduction losses and switching losses effectively, making it optimal for medium switching speed applications.
The semiconductor is rated for wide temperature ranges from -55°C to 175°C, ensuring robust operation in industrial, automotive, and renewable energy environments. It incorporates a positive temperature coefficient design that enables easy paralleling for higher current applications. Low gate-emitter voltage rating of 20 V provides protection against overstress.
Typical use cases for the FGHL75T65MQDT IGBT include solar inverter systems, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS). Its design priorities include reducing turnoff voltage overshoot and enhancing switching efficiency, making it suitable for high-performance power conversion tasks.
Maximum collector emitter voltage rating of 650 V. 375 W maximum power dissipation capability. TO-247-3L package suitable for surface mount installation. Operating temperature from -55°C to 175°C for industrial durability.
Maximum gate emitter voltage of 20 V for gate protection. Positive temperature coefficient for safe paralleling. Low conduction and switching losses for power efficiency. RoHS-compliant semiconductor device. Applicable for solar inverters, UPS, EV charging stations, and ESS.
Compact size dimensions ensure easy integration in power circuits.
This FGHL75T65MQDT IGBT from onsemi is a critical component for high performance and reliable power electronic systems. Its balance of electrical and thermal characteristics supports enhanced device longevity and system stability. This semiconductor is ideal for engineers and designers creating efficient power conversion and management solutions.
Explore the range of semiconductor components and IGBTs available at EnvMart for your power electronics and industrial application needs.
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Frequently Asked Questions
The maximum collector-emitter voltage rating of this IGBT is 650 V.
This model has a maximum power dissipation capability of 375 W.
The dimensions of the TO-247-3L package are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
The operating temperature range for this IGBT is from -55°C to 175°C.
The maximum gate-emitter voltage rating is 20 V, which protects the gate integrity.
This model is designed for surface mounting.
This IGBT is suitable for applications such as solar inverter systems, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS).
The FGHL75T65MQDT has a pin count of 3.
This IGBT is RoHS-compliant, ensuring it meets environmental standards.
The positive temperature coefficient design allows for better paralleling operation, enhancing performance in higher current applications.
This IGBT is designed to have low conduction and switching losses, optimizing efficiency in power circuits.
The FGHL75T65MQDT is manufactured in India.
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