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Vishay EF Series Power N-Channel Depletion MOSFET, 46 A, 650 V, TO-263 Package SIHB055N60EF-GE3

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Vishay EF Series Power N-Channel Depletion MOSFET, 46 A, 650 V, TO-263 Package SIHB055N60EF-GE3

Name: Vishay EF Series Power N-Channel Depletion MOSFET, 46 A, 650 V, TO-263 Package SIHB055N60EF-GE3
Brand: Vishay
SKU: 322730
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SIHB055N60EF-GE3
Mount Type	Surface
Series	EF
Maximum Operating Temperature	125°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	46A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	0.05Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	278W
Typical Gate Charge Qg @ Vgs	63nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

The MOSFET provides a maximum continuous drain current of 46 A for robust power delivery.
Maximum drain to source voltage rating is 650 V enabling high-voltage operation.
It features low drain-source resistance of 0.05 ohms minimizing conduction losses.
Typical gate charge of 63 nC reduces switching losses for efficient operation.
Maximum power dissipation rating of 278 W supports high thermal loads.
Surface mount TO-263 package with 3 pins ensures compact installation on PCBs.
Device supports automotive-grade standard AEC-Q101 ensuring reliability in harsh environments.
Operates over a temperature range from -55°C to 125°C for industrial compatibility.

Product Description

Vishay SIHB055N60EF-GE3 is a power MOSFET of the EF series designed as a depletion mode N-channel transistor with a 3-pin TO-263 surface mount package. It supports continuous drain currents up to 46 A and withstands drain-source voltages as high as 650 V, making it ideal for demanding power and switching applications.

This MOSFET incorporates 4th generation EF series technology offering low effective capacitance and reduced switching and conduction losses, improving overall efficiency in power electronics.

The device includes a fast body diode and is suitable for server, telecommunications power supplies, welding equipment, and motor drive circuits.

Key electrical specifications include a maximum drain-source resistance Rds(on) of 0.05 Ω, typical gate charge of 63 nC measured at Vgs, forward voltage of 1.2 V, and maximum power dissipation of 278 W ensuring high power handling.

Thermal and mechanical ratings cover operation from -55°C minimum to 125°C maximum, supporting use in harsh industrial and automotive environments, backed by AEC-Q101 compliance. The TO-263 package type provides a compact form factor for surface mount PCB designs, allowing efficient heat dissipation and space savings.

The MOSFET delivers high continuous drain current capability of 46 amperes. Rated for drain-source voltages of up to 650 volts for high voltage tolerance. Features a low on-resistance Rds(on) of 0.05 ohms for reduced conduction losses.

Typical gate charge is 63 nanocoulombs ensuring fast switching. Can dissipate power up to 278 watts under suitable cooling. Operates reliably in temperatures ranging from minus 55 to 125 degrees Celsius. Supplied in a 3-pin TO-263 surface mount package for easy PCB integration.

Meets automotive quality standards with AEC-Q101 certification.

This high-quality Vishay EF series MOSFET is well suited to industrial, telecommunications, automotive, and power electronics applications requiring a robust, efficient high-voltage switching component. EnvMart offers this product within its wide selection of discrete semiconductors for professional use.

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