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Vishay N-Channel MOSFET 30 V 104 A 8-Pin PowerPAK 1212-8PT Surface Mount SISA10BDN-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 0.75mm
Length 3.3mm
Model SISA10BDN-T1-GE3
Width 3.3mm
Mount Type Surface
Series SISA10BDN
Maximum Operating Temperature 150°C
Package Type PowerPAK 1212-8PT
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 104A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.0036Ω
Maximum Power Dissipation Pd 63W
Typical Gate Charge Qg @ Vgs 11.7nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Offers very low on-resistance of 0.0036 ohms for reduced conduction losses.
  • Maximum power dissipation rated at 63 watts for reliable thermal performance.
  • Typical gate charge of 11.7 nC enables fast switching speed.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Packaged in compact 8-pin PowerPAK 1212-8PT surface-mount package for dense PCB assembly.
  • Gate-source voltage withstand capability of 20 volts.
  • Forward voltage drop of 1.1 V supports efficient conduction.
  • Meets RoHS environmental standards ensuring hazardous substances are minimized.

Product Description

Vishay SISA10BDN-T1-GE3 is an N-Channel MOSFET rated for a maximum drain-source voltage of 30 V and a continuous drain current of 104 A. This surface-mount power MOSFET comes in an 8-pin PowerPAK 1212-8PT package that offers a low profile and is optimized for high-density PCB layouts.

The device exhibits very low on-resistance of 0.0036 ohms, which helps minimize conduction losses in high-current switching applications. Its maximum power dissipation of 63 W allows operation under sustained thermal loads, making it suitable for demanding thermal environments.

Typical gate charge of 11.7 nC ensures fast gate drive transitions, improving switching efficiency and overall performance. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronic applications.

Additional features include a gate-source maximum voltage of 20 V and a forward voltage drop of 1.1 V, which contribute to flexible drive options and efficient conduction characteristics.

This MOSFET complies with RoHS standards, ensuring it is free from restricted hazardous substances. Typical applications include synchronous buck regulators, motor driver half-bridges, high-current load switches in server power rails, battery management in high-drain systems, solid-state relays, and automotive power modules.

The surface-mount PowerPAK 1212-8PT package format requires reflow soldering and provides excellent electrical and thermal contact. It is designed for compact and efficient power switching solutions in electronic assemblies.

Very low on-resistance improves conduction efficiency. High continuous drain current supports heavy load switching. Wide operating temperature range enables use in harsh environments. Compact 8-pin PowerPAK package for dense PCB integration.

Typical gate charge enables quick switching response. Meets RoHS environmental compliance. Suitable for industrial, automotive, and commercial electronics. Supports synchronous regulator and motor driver applications.

This MOSFET is part of the Vishay SISA10BDN series, known for high performance in low voltage power switching tasks. Explore the Electronics & Electricals category for more semiconductor components and power MOSFET devices to meet diverse industrial and manufacturing requirements.

Vishay N-Channel MOSFET 30 V 104 A 8-Pin PowerPAK 1212-8PT Surface Mount SISA10BDN-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 104 A.

This N-channel MOSFET has a maximum drain-source voltage rating of 30 V.

It features a very low on-resistance of 0.0036 ohms, which helps reduce conduction losses.

The maximum power dissipation rated for this unit is 63 watts, suitable for sustained thermal loads.

The typical gate charge is 11.7 nC, enabling fast switching speeds.

It operates over a wide temperature range from -55°C to 150°C.

This device is packaged in an 8-pin PowerPAK 1212-8PT surface-mount package.

The maximum gate-source voltage withstand capability is 20 V.

It is suitable for applications such as synchronous buck regulators, motor driver half-bridges, and high-current load switches.

The dimensions are 3.3 mm in length and width, with a height of 0.75 mm.

Yes, it meets RoHS environmental standards, ensuring it is free from restricted hazardous substances.

The forward voltage drop is 1.1 V, which supports efficient conduction.

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