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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.75mm |
| Length | 3.3mm |
| Model | SISA10BDN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SISA10BDN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8PT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 104A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.0036Ω |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 11.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Vishay SISA10BDN-T1-GE3 is an N-Channel MOSFET rated for a maximum drain-source voltage of 30 V and a continuous drain current of 104 A. This surface-mount power MOSFET comes in an 8-pin PowerPAK 1212-8PT package that offers a low profile and is optimized for high-density PCB layouts.
The device exhibits very low on-resistance of 0.0036 ohms, which helps minimize conduction losses in high-current switching applications. Its maximum power dissipation of 63 W allows operation under sustained thermal loads, making it suitable for demanding thermal environments.
Typical gate charge of 11.7 nC ensures fast gate drive transitions, improving switching efficiency and overall performance. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronic applications.
Additional features include a gate-source maximum voltage of 20 V and a forward voltage drop of 1.1 V, which contribute to flexible drive options and efficient conduction characteristics.
This MOSFET complies with RoHS standards, ensuring it is free from restricted hazardous substances. Typical applications include synchronous buck regulators, motor driver half-bridges, high-current load switches in server power rails, battery management in high-drain systems, solid-state relays, and automotive power modules.
The surface-mount PowerPAK 1212-8PT package format requires reflow soldering and provides excellent electrical and thermal contact. It is designed for compact and efficient power switching solutions in electronic assemblies.
Very low on-resistance improves conduction efficiency. High continuous drain current supports heavy load switching. Wide operating temperature range enables use in harsh environments. Compact 8-pin PowerPAK package for dense PCB integration.
Typical gate charge enables quick switching response. Meets RoHS environmental compliance. Suitable for industrial, automotive, and commercial electronics. Supports synchronous regulator and motor driver applications.
This MOSFET is part of the Vishay SISA10BDN series, known for high performance in low voltage power switching tasks. Explore the Electronics & Electricals category for more semiconductor components and power MOSFET devices to meet diverse industrial and manufacturing requirements.
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