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Toshiba Type P-Channel MOSFET 6 A 12 V 3-Pin SOT-23 Surface Mount SSM3J338R,LF(T

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Toshiba Type P-Channel MOSFET 6 A 12 V 3-Pin SOT-23 Surface Mount SSM3J338R,LF(T

Name: Toshiba Type P-Channel MOSFET 6 A 12 V 3-Pin SOT-23 Surface Mount SSM3J338R,LF(T
Brand: Toshiba
SKU: 322297
Price: 3.85 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	0.8mm
Length	2.4mm
Model	SSM3J338R,LF(T
Width	2.9mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	12V
Maximum Drain Source Resistance Rds	26.3mΩ
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	19.5nC
Maximum Gate Source Voltage Vgs	10V
Forward Voltage Vf	0.75V

Key Features

This MOSFET has a maximum continuous drain current of 6 amperes.
It operates at a maximum drain-source voltage of 12 volts suitable for power switching applications.
The device package is SOT-23 with a surface mount type and 3 pins for PCB integration.
Maximum drain-source resistance (Rds) is 26.3 milliohms ensuring low conduction losses.
Typical gate charge is 19.5 nanocoulombs at gate-source voltage, enabling efficient switching.
Maximum power dissipation is rated at 2 watts for thermal management.
Operating temperature range is from -55 °C to 150 °C for reliable industrial use.
The maximum gate-source voltage is 10 volts and forward voltage is 0.75 volts.

Product Description

Toshiba SSM3J338R,LF(T is a Type P-Channel MOSFET designed for power management and switching in electronic circuits. This device supports a maximum continuous drain current of 6 A and a maximum drain-source voltage of 12 V, making it suitable for various supply voltage regulation and load switching applications.

The MOSFET comes in a compact SOT-23 surface mount package with 3 pins, facilitating easy PCB assembly in compact electronic devices. It features a low on-resistance of 26.3 milliohms, which ensures minimal power loss and efficient operation.

Gate charge and forward voltage specifications of 19.5 nC and 0.75 V respectively contribute to fast switching performance and reduced power dissipation. Its thermal rating allows a power dissipation of up to 2 watts and an operating temperature range from -55 °C to 150 °C, ensuring reliability under harsh industrial and commercial conditions.

The physical dimensions are optimized for space saving electronics: length 2.4 mm, width 2.9 mm, and height 0.8 mm. This MOSFET does not carry automotive-specific certifications or standards but is suitable for general electronics and power management applications.

This MOSFET supports a maximum continuous drain current of 6 A. Maximum drain-source voltage is 12 V for safe operation. Low on-resistance of 26.3 mΩ reduces conduction loss. Typical gate charge of 19.5 nC enables efficient switching.

Power dissipation rating of 2 W ensures thermal robustness. Wide operating temperature range from −55 °C to 150 °C. SOT-23 package with surface mount helps compact device design. Physical size is 2.4 mm by 2.9 mm by 0.8 mm height.

Forward voltage of 0.75 V supports low voltage operation.

This product is ideal for industrial electronics, power supplies, and general-purpose switching applications where small size and efficient power management are required. Compatible with surface mount PCB assemblies, it provides reliable performance for discrete semiconductor requirements.

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