Toshiba P-Channel MOSFET 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T

Toshiba SSM3J328R,LF(T is a P-Channel MOSFET transistor designed for power management and switching applications. It features a compact 3-pin SOT-23 surface-mount package suitable for modern electronic circuit boards. This MOSFET supports a maximum continuous drain current of 6 amperes and a drain-source voltage of 20 volts, making it suitable for handling moderate power loads with efficiency.

With a low maximum drain-source resistance of 88.4 milliohms, it offers minimal conduction losses, which enhances the overall energy efficiency in electronic designs. The typical gate charge of 12.8 nanocoulombs at an 8-volt gate voltage enables quick switching speeds, which is critical in high-frequency electronic circuits.

Designed to operate reliably across a broad temperature range from -55°C to 150°C, the SSM3J328R,LF(T is suitable for various industrial, commercial, and consumer electronics applications. The transistor has a forward voltage drop of 870 millivolts, allowing for efficient current flow with reduced power dissipation, which is rated up to 2 watts.

This MOSFET does not carry automotive certification and is thus ideal for general-purpose electronic components in power supplies, voltage regulation circuits, and switching mechanisms. Its small dimensions, 2.4 mm length, 2.9 mm width, and 800 μm height, allow for effective integration into compact electronic devices.

The product is engineered with silicon material ensuring stability and durability. The SOT-23 packaging facilitates surface mounting and automated PCB assembly, improving production efficiency in manufacturing environments.

Type P channel MOSFET optimized for switching applications. Maximum continuous drain current of 6 amperes for robust current handling. Drain-source voltage rated at 20 volts ensuring safe operational limits. Compact 3-pin SOT-23 surface-mount package for efficient PCB layout.

Low maximum drain-source resistance of 88.4 milliohms for minimal conduction losses. Maximum power dissipation of 2 watts supports moderate power loads. Typical gate charge of 12.8 nanocoulombs at gate voltage of 8 volts for fast switching.

Operational temperature range from -55°C to 150°C for various environments. Forward voltage drop of 870 millivolts enabling efficient operation. High reliability with no automotive certification, ideal for industrial and consumer electronics.

This Toshiba MOSFET is suitable for applications in industrial power management, consumer electronics, and general semiconductor component needs. It supports various manufacturing and repair workflows requiring durable and performant discrete transistor components.

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